The present research employs in-situ plasma Optical Emission Spectroscopy (OES) to explore the effect of microwave plasma jet chemical vapor deposition (MPJCVD) on activating CH 4 þ H 2 plasma environment and synthesizing diamond film. Surface morphology and main orientation of lattice plane of the diamond synthesized under different processing parameters are also examined. Since species such as CH, H 2 , hydrogen Balmer alpha (H ), carbon dimer (C 2 ) and hydrogen Balmer beta H in the plasma radical are easily influenced by gas concentration, substrate temperature and processing parameters, in-situ OES is employed to diagnose in-situ OES diagnosing is employed to composition of plasma species in the synthesis of diamond film. Our findings ...
A very high vacuum compatible microwave plasma chemical vapor deposition system has been fabricated ...
Several sets of diamond films have been grown by Microwave Plasma-Enhanced Chemical Vapor Deposition...
Diamond is a wide band gap semiconductor of 5.5eV, and it has high carrier mobility, mechanical hard...
This work aimed to the identification of the principal gaseous species involved in microwave plasmaa...
This thesis reports experimental studies of the gas-phase chemistry within microwave plasma en- hanc...
Several sets of diamond films were grown by microwave plasma enhanced chemical vapor deposition (CVD...
Several sets of diamond films were grown by microwave plasma enhanced chemical vapor deposition (CVD...
Diamond films have been successfully deposited at substrate temperatures as low as 435C using CO CH ...
Diamond growth was carried out using various kinds of substrates and substrate holders in convention...
Several sets of diamond films were grown by microwave plasma enhanced chemical vapor deposition (CVD...
Diamond growth was carried out using various kinds of substrates and substrate holders in convention...
Several sets of diamond films were grown by microwave plasma enhanced chemical vapor deposition (CVD...
Several sets of diamond films have been grown by Microwave Plasma-Enhanced Chemical Vapor Deposition...
Several sets of diamond films have been grown by Microwave Plasma-Enhanced Chemical Vapor Deposition...
Several sets of diamond films have been grown by Microwave Plasma-Enhanced Chemical Vapor Deposition...
A very high vacuum compatible microwave plasma chemical vapor deposition system has been fabricated ...
Several sets of diamond films have been grown by Microwave Plasma-Enhanced Chemical Vapor Deposition...
Diamond is a wide band gap semiconductor of 5.5eV, and it has high carrier mobility, mechanical hard...
This work aimed to the identification of the principal gaseous species involved in microwave plasmaa...
This thesis reports experimental studies of the gas-phase chemistry within microwave plasma en- hanc...
Several sets of diamond films were grown by microwave plasma enhanced chemical vapor deposition (CVD...
Several sets of diamond films were grown by microwave plasma enhanced chemical vapor deposition (CVD...
Diamond films have been successfully deposited at substrate temperatures as low as 435C using CO CH ...
Diamond growth was carried out using various kinds of substrates and substrate holders in convention...
Several sets of diamond films were grown by microwave plasma enhanced chemical vapor deposition (CVD...
Diamond growth was carried out using various kinds of substrates and substrate holders in convention...
Several sets of diamond films were grown by microwave plasma enhanced chemical vapor deposition (CVD...
Several sets of diamond films have been grown by Microwave Plasma-Enhanced Chemical Vapor Deposition...
Several sets of diamond films have been grown by Microwave Plasma-Enhanced Chemical Vapor Deposition...
Several sets of diamond films have been grown by Microwave Plasma-Enhanced Chemical Vapor Deposition...
A very high vacuum compatible microwave plasma chemical vapor deposition system has been fabricated ...
Several sets of diamond films have been grown by Microwave Plasma-Enhanced Chemical Vapor Deposition...
Diamond is a wide band gap semiconductor of 5.5eV, and it has high carrier mobility, mechanical hard...