Abstract. Low pressure plasma reactors are important tools for ionized metal physical vapor deposition (IMPVD), a semiconductor plasma processing technology that is increasingly being applied to deposit Cu seed layers on semiconductor surfaces of trenches and vias with the high aspect ratio (e.g., > 5:1). A large fraction of ionized atoms produced by the IMPVD process leads to an anisotropic deposition flux towards the substrate, a feature which is critical for attaining a void-free and uniform fill. Modeling such devices is challenging due to their high plasma density, reactive environment, but low gas pressure. A modular code developed by the Computational Optical and Discharge Physics Group, the Hybrid Plasma Equipment Model (HPEM), h...
In the framework of material processing, plasma chemical vapor deposition represents an attracting r...
A hierarchical modeling methodology has been developed to describe plasma assisted processes used in...
We present a computational study of processes taking place in a sheath region formed near a negative...
Plasmas are used extensively in semiconductor manufacturing for etching features and vias, for depos...
In the low pressure, high density, inductively coupled plasma etching reactors being currently devel...
Abstract. In this paper, we illustrate different aspects of electron kinetics and rarefied gas effec...
In the semiconductor industry the number of devices per die increases and the critical dimension dec...
Neutral gas physics and neutral interactions with the plasma are key aspects of edge plasma and dive...
In low pressure electron cyclotron resonance and remote plasma enhanced chemical vapor deposition re...
In low pressure electron cyclotron resonance and remote plasma enhanced chemical vapor deposition re...
MasterLow temperature plasma at low pressure is widely used for material etching, deposition and sur...
137 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2005.Ionized metal physical vapor ...
137 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2005.Ionized metal physical vapor ...
This paper will focus on the methodology of using a 2D plasma Direct Simulation Monte Carlo techniqu...
Inductive plasmas are simulated by using a one-dimensional particle-in-cell simulation including Mon...
In the framework of material processing, plasma chemical vapor deposition represents an attracting r...
A hierarchical modeling methodology has been developed to describe plasma assisted processes used in...
We present a computational study of processes taking place in a sheath region formed near a negative...
Plasmas are used extensively in semiconductor manufacturing for etching features and vias, for depos...
In the low pressure, high density, inductively coupled plasma etching reactors being currently devel...
Abstract. In this paper, we illustrate different aspects of electron kinetics and rarefied gas effec...
In the semiconductor industry the number of devices per die increases and the critical dimension dec...
Neutral gas physics and neutral interactions with the plasma are key aspects of edge plasma and dive...
In low pressure electron cyclotron resonance and remote plasma enhanced chemical vapor deposition re...
In low pressure electron cyclotron resonance and remote plasma enhanced chemical vapor deposition re...
MasterLow temperature plasma at low pressure is widely used for material etching, deposition and sur...
137 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2005.Ionized metal physical vapor ...
137 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2005.Ionized metal physical vapor ...
This paper will focus on the methodology of using a 2D plasma Direct Simulation Monte Carlo techniqu...
Inductive plasmas are simulated by using a one-dimensional particle-in-cell simulation including Mon...
In the framework of material processing, plasma chemical vapor deposition represents an attracting r...
A hierarchical modeling methodology has been developed to describe plasma assisted processes used in...
We present a computational study of processes taking place in a sheath region formed near a negative...