The anodic tantalum oxide films were grown in 5ml/98% H 2 SO 4 electrolyte saturated with additional H 2 . Discharge currents were collected immediately after growth. The optical properties of these films were studied with an ellipsometer over a wide range of frequencies from the UV to the IR. It was established that films for which the discharge currents followed the known "~ -1" power dependence (specific for films that can sustain large electric fields in the MV/cm range) have different optical properties as compared to films for which the discharge current is not represented by that empirical function. Etching studies of e-beam deposited Ta 2 O 5 films, combined with reflectance measurements after each etch step, resulted in a...
Tantalum oxide (TaOx) films were deposited by KrF excimer laser ablation of Ta2O5 targets in an oxyg...
We have investigated optical properties of tantalum pentoxide films obtained by anodization of thin ...
Dielectric films are important in the fabrication of semiconductor devices. Thermally grown and CVD ...
Ta2O5 is a material with good perspectives for many applications in modern electronics and informati...
Ta2O5 is a material with good perspectives for many applications in modern electronics and informati...
Anodic oxides were grown to 50 V on Ta in several organic ions containing anodizing baths. Thei...
Anodic oxides were grown to 50 V on Ta in several organic ions containing anodizing baths. Thei...
An analysis of the electronic properties of Ta2O5 / electrolyte junction is reported for thin film (...
The optical and surface morphological properties of thin films are profoundly influenced by the depo...
An analysis of the electronic properties of Ta2O5 / electrolyte junction is reported for thin film (...
Reactively evaporated thin films of tantalum oxide are prepared on glass substrate, using electron ...
An automated ellipsometer was used to study three topics associated with the anodic oxide films of t...
An automated ellipsometer was used to study three topics associated with the anodic oxide films of t...
Tantalum oxide (Ta2O5) films were formed on silicon (111) and quartz substrates by dc reactive magne...
Tantalum penta-oxide (Ta2O5) thin films were deposited onto highly polished and clean, fused silica ...
Tantalum oxide (TaOx) films were deposited by KrF excimer laser ablation of Ta2O5 targets in an oxyg...
We have investigated optical properties of tantalum pentoxide films obtained by anodization of thin ...
Dielectric films are important in the fabrication of semiconductor devices. Thermally grown and CVD ...
Ta2O5 is a material with good perspectives for many applications in modern electronics and informati...
Ta2O5 is a material with good perspectives for many applications in modern electronics and informati...
Anodic oxides were grown to 50 V on Ta in several organic ions containing anodizing baths. Thei...
Anodic oxides were grown to 50 V on Ta in several organic ions containing anodizing baths. Thei...
An analysis of the electronic properties of Ta2O5 / electrolyte junction is reported for thin film (...
The optical and surface morphological properties of thin films are profoundly influenced by the depo...
An analysis of the electronic properties of Ta2O5 / electrolyte junction is reported for thin film (...
Reactively evaporated thin films of tantalum oxide are prepared on glass substrate, using electron ...
An automated ellipsometer was used to study three topics associated with the anodic oxide films of t...
An automated ellipsometer was used to study three topics associated with the anodic oxide films of t...
Tantalum oxide (Ta2O5) films were formed on silicon (111) and quartz substrates by dc reactive magne...
Tantalum penta-oxide (Ta2O5) thin films were deposited onto highly polished and clean, fused silica ...
Tantalum oxide (TaOx) films were deposited by KrF excimer laser ablation of Ta2O5 targets in an oxyg...
We have investigated optical properties of tantalum pentoxide films obtained by anodization of thin ...
Dielectric films are important in the fabrication of semiconductor devices. Thermally grown and CVD ...