Simulation of Electron Mobility in Ultrathin Fully Depleted Single Gate SOI MOSFETs

Abstract Inversion layer mobility in extremely thin SOI MOSFETs with silicon film thickness down to 10 nm lias been investigated. The Bollzmann transport equation has been solved by the Monte Carlo method. The mobility decrease appearing in devices with a silicon film thickness below 20nm is satisfactorily explained by the contribution of two scattering mcclianisms: i) an increase in phonon scattering as a consequence of the greater confinement of the electrons in the thin silicon film, and ii) the increase in Coulomb scattering due to a greater number of interface traps in the buried Si-Si0 2