Preparation of Microcrystalline Silicon Based Solar Cells at High i-layer Deposition Rates Using a Gas Jet Technique

ABSTRACT A Gas Jet technique has been used to prepare microcrystalline silicon (µc-Si) thin films at deposition rates as high as 20 Å/s. The films have microcrystal sizes between 80 and 120 Å with a heterogeneous microstructure containing regions with columnar growth and other regions with a more randomly oriented microstructure. These materials have been used as i-layers for nip single-junction solar cells. The high deposition rates allow for fabrication of the required thicker µc-S