Effects of N-ion-implantation and post-thermal annealing on ZnO:Mg thin films

N-ion-implantation to a fluence of 1×10 17 N + /cm 2 was performed on ZnO:Mg thin films deposited on fused silica glass substrates by a sol-gel technique. The N-implanted films were annealed in flowing nitrogen at 500-900 o C. Damage recovery was investigated by X-ray diffraction (XRD), photoluminescence (PL) and optical absorption measurements. Results showed that diffraction peaks and PL intensities were decreased by N ion implantation, but they partially recovered after thermal annealing. In this experiment, all films exhibited high resistivity and p-type conduction was not observed after N ion implantation