Structures containing Zn1 x MgxS have been grown lattice matched to GaAs by using molecular beam epitaxy (MBE) with ZnS as the source of S. The composition of the alloy produced has been determined using double-crystal X-ray spectroscopy and X-ray interference measurements. Both techniques indicate that 0.88 x 0.93. This result is conrmed by both secondary ion mass spectroscopy and an Auger analysis carried out on the material. These results show that the crystalline quality of the material produced is excellent and that it has been grown coherently to the GaAs substrate. Photoluminescence spectroscopy shows a high intensity emission with a narrow full width half maximum, conrming the suitability of this alloy as a high-bandgap barrier mate...
We report the epitaxial growth of CdSe, Zn<SUB>1-x</SUB> Cd <SUB>x</SUB> Se (0 ≤ x ≤ 1) ...
The crystalline and optical quality of ZnS epilayers grown on (100)GaAs by MOVPE was investigated by...
The crystalline and optical quality of ZnS epilayers grown on (100)GaAs by MOVPE was investigated by...
The structural characterisation of MOVPE-grown ZnMgSe and ZnSe/ZnMgSe multiple quantum wells (MQWs) ...
This thesis describes the growth and characterisation of ZnSe-based II-semiconductors by Molecular B...
The low-pressure MOVPE growth of ZnMgSe on (100)GaAs is reported. ZnMgSe alloys were deposited after...
A detailed structural characterization of ZnSe/ZnMgSe multiple quantum wells (MQWs) grown on GaAs by...
We report on the MOVPE of MgSe and ZnMgSe on (100)GaAs. Dimethylzinc:triethylammine, ditertiarylbuty...
This thesis presents a fundamental study of II-VI metastable sulfides. Details of the growth by Mole...
a b s t r a c t The wide bandgap alloy Zn 0.2 Mg 0.8 S 0.64 Se 0.36 has recently been grown by molec...
This paper presents a detailed study of Zn1xMgxSySe1y epitaxial films on GaAs (1 0 0) substrates usi...
Wide-gap II/VI heterostructures (HS) and quantum wells (QW) composed of ZnSe, CdSe, MgSe, and their ...
Wide-gap II/VI heterostructures (HS) and quantum wells (QW) composed of ZnSe, CdSe, MgSe, and their ...
Wide-gap II/VI heterostructures (HS) and quantum wells (QW) composed of ZnSe, CdSe, MgSe, and their ...
Thesis (Sc. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer...
We report the epitaxial growth of CdSe, Zn<SUB>1-x</SUB> Cd <SUB>x</SUB> Se (0 ≤ x ≤ 1) ...
The crystalline and optical quality of ZnS epilayers grown on (100)GaAs by MOVPE was investigated by...
The crystalline and optical quality of ZnS epilayers grown on (100)GaAs by MOVPE was investigated by...
The structural characterisation of MOVPE-grown ZnMgSe and ZnSe/ZnMgSe multiple quantum wells (MQWs) ...
This thesis describes the growth and characterisation of ZnSe-based II-semiconductors by Molecular B...
The low-pressure MOVPE growth of ZnMgSe on (100)GaAs is reported. ZnMgSe alloys were deposited after...
A detailed structural characterization of ZnSe/ZnMgSe multiple quantum wells (MQWs) grown on GaAs by...
We report on the MOVPE of MgSe and ZnMgSe on (100)GaAs. Dimethylzinc:triethylammine, ditertiarylbuty...
This thesis presents a fundamental study of II-VI metastable sulfides. Details of the growth by Mole...
a b s t r a c t The wide bandgap alloy Zn 0.2 Mg 0.8 S 0.64 Se 0.36 has recently been grown by molec...
This paper presents a detailed study of Zn1xMgxSySe1y epitaxial films on GaAs (1 0 0) substrates usi...
Wide-gap II/VI heterostructures (HS) and quantum wells (QW) composed of ZnSe, CdSe, MgSe, and their ...
Wide-gap II/VI heterostructures (HS) and quantum wells (QW) composed of ZnSe, CdSe, MgSe, and their ...
Wide-gap II/VI heterostructures (HS) and quantum wells (QW) composed of ZnSe, CdSe, MgSe, and their ...
Thesis (Sc. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer...
We report the epitaxial growth of CdSe, Zn<SUB>1-x</SUB> Cd <SUB>x</SUB> Se (0 ≤ x ≤ 1) ...
The crystalline and optical quality of ZnS epilayers grown on (100)GaAs by MOVPE was investigated by...
The crystalline and optical quality of ZnS epilayers grown on (100)GaAs by MOVPE was investigated by...