A dislocation density-based single crystal constitutive equation

a b s t r a c t Single crystal constitutive equations based on dislocation density (SCCE-D) were developed from Orowan's strengthening equation and simple geometric relationships of the operating slip systems. The flow resistance on a slip plane was computed using the Burger's vector, line direction, and density of the dislocations on all other slip planes, with no adjustable parameters. That is, the latent/self-hardening matrix was determined by the crystallography of the slip systems alone. The multiplication of dislocations on each slip system incorporated standard 3-parameter dislocation density evolution equations applied to each slip system independently; this is the only phenomenological aspect of the SCCE-D model. In contrast, the most widely used single crystal constitutive equations for texture analysis (SCCE-T) feature 4 or more adjustable parameters that are usually back-fit from a polycrystal flow curve. In order to compare the accuracy of the two approaches to reproduce single crystal behavior, tensile tests of single crystals oriented for single slip were simulated using crystal plasticity finite element modeling. Best-fit parameters (3 for SCCE-D, 4 for SCCE-T) were determined using either multiple or single slip stress-strain curves for copper and iron from the literature. Both approaches reproduced the data used for fitting accurately. Tensile tests of copper and iron single crystals oriented to favor the remaining combinations of slip systems were then simulated using each model (i.e. multiple slip cases for equations fit to single slip, and vice versa). In spite of fewer fit parameters, the SCCE-D predicted the flow stresses with a standard deviation of 14 MPa, less than one half that for the SCCE-T conventional equations: 31 MPa. Polycrystalline texture simulations were conducted to compare predictions of the two models. The predicted polycrystal flow curves differed considerably, but the differences in texture evolution were insensitive to the type of constitutive equations. The SCCE-D method provides an improved representation of single-crystal plastic response with fewer adjustable parameters, better accuracy, and better predictivity than the constitutive equations most widely used for texture analysis (SCCE-T)