MODELING LOCALIZED STATES AND BAND BENDING EFFECTS ON ELECTRON EMISSION ION FROM GaAs *

Abstract High acceptor doping of GaAs and (Cs, O) surface coating leads to downward band bending terminating with effective negative electron affinity surface. The periodicity breaking at the surface together with the formed potential leads to one or more localized states in the band bending region together with effective Fermi level pinning. We report results on how to calculate the band bending potential, the Fermi level pinning, and localized states as functions of GaAs p-doping density, surface density of states, and temperature. We also consider how these surface properties affect electron emission