Abstract The effect of the electric field on an exciton confined in a pair of vertically coupled quantum dots is studied. We use a single-band approximation and a parabolic model potential. As a result of these idealizations, we obtain a numerically solvable model, which is used to describe the influence of the electron-hole interaction on the Stark effect for the lowestenergy photoluminescence lines. We show that for intermediate tunnel coupling between the dots this interaction leads to an anomalous Stark effect with an essential deviation of the recombination energy from the usual quadratic dependence on the electric field. Self-assembled InAs/GaAs quantum dots grown on subsequent layers stack one above the other In this paper, we inves...
We have fabricated light-emitting-diode heterostructure devices, in which a layer of InAs self-assem...
We have fabricated light-emitting-diode heterostructure devices, in which a layer of InAs self-assem...
We have fabricated light-emitting-diode heterostructure devices, in which a layer of InAs self-assem...
Abstract: We theoretically investigate the optical properties of the exciton confined in parabolic q...
Quantum-confined Stark effects in InAs/GaAs self-assembled quantum dots are investigated theoretical...
We theoretically investigate the optical properties of the exciton confined in parabolic quantum-dot...
We theoretically investigate the optical properties of the exciton confined in parabolic quantum-dot...
Quantum-confined Stark effects in GaAs/AlxGa1-xAs self-assembled quantum dots are investigated theor...
Within the framework of the single-band effective-mass envelope-function theory, the effect of elect...
We review results of our modeling of excitons and excitonic trions confined in vertically stacked In...
We have fabricated light-emitting-diode heterostructure devices, in which a layer of InAs self-assem...
We have fabricated light-emitting-diode heterostructure devices, in which a layer of InAs self-assem...
We have fabricated light-emitting-diode heterostructure devices, in which a layer of InAs self-assem...
We have fabricated light-emitting-diode heterostructure devices, in which a layer of InAs self-assem...
We have fabricated light-emitting-diode heterostructure devices, in which a layer of InAs self-assem...
We have fabricated light-emitting-diode heterostructure devices, in which a layer of InAs self-assem...
We have fabricated light-emitting-diode heterostructure devices, in which a layer of InAs self-assem...
We have fabricated light-emitting-diode heterostructure devices, in which a layer of InAs self-assem...
Abstract: We theoretically investigate the optical properties of the exciton confined in parabolic q...
Quantum-confined Stark effects in InAs/GaAs self-assembled quantum dots are investigated theoretical...
We theoretically investigate the optical properties of the exciton confined in parabolic quantum-dot...
We theoretically investigate the optical properties of the exciton confined in parabolic quantum-dot...
Quantum-confined Stark effects in GaAs/AlxGa1-xAs self-assembled quantum dots are investigated theor...
Within the framework of the single-band effective-mass envelope-function theory, the effect of elect...
We review results of our modeling of excitons and excitonic trions confined in vertically stacked In...
We have fabricated light-emitting-diode heterostructure devices, in which a layer of InAs self-assem...
We have fabricated light-emitting-diode heterostructure devices, in which a layer of InAs self-assem...
We have fabricated light-emitting-diode heterostructure devices, in which a layer of InAs self-assem...
We have fabricated light-emitting-diode heterostructure devices, in which a layer of InAs self-assem...
We have fabricated light-emitting-diode heterostructure devices, in which a layer of InAs self-assem...
We have fabricated light-emitting-diode heterostructure devices, in which a layer of InAs self-assem...
We have fabricated light-emitting-diode heterostructure devices, in which a layer of InAs self-assem...
We have fabricated light-emitting-diode heterostructure devices, in which a layer of InAs self-assem...