Add to ORKGAbstract In this paper, a newly developed diode technology platform for 3.3 kV, 4.5 kV and 6.5 kV diodes for next generation high power IGBT modules will be presented. The new diode range offers low losses and soft recovery characteristics combined with a high reverse recovery safe operating area and superior surge current capability. The new diode technology employs a double local lifetime-control method using He ++ irradiation to control the on-state electron-hole distribution on both the anode and cathode sides of the diode
In this paper, we introduce our new high voltage IGBT HiPak module line-up with voltage ratings rang...
The in-depth analysis of the Semiconductor Power Electronics applications are essential for future d...
The drive towards the rational use of energy demands fast, reliable, efficient and low-cost power sw...
For the evolution of power electronics, it is essential to enhance the performance of Insulate Gate ...
Abstract: Following fast on the successful market introduction of the 1200V Soft-Punch-Through (SPT)...
This paper discusses the trade-off between surge-current capability on the one hand and reverse-reco...
The Trench Insulated Gate Bipolar Transistor (IGBT) is the most promising structure for the next gen...
In order to help improve performance, size and cost of high power electronic systems, the developmen...
This paper presents new gallium arsenide power Schottky diodes with blocking voltages of some hundre...
Fast recovery diodes, though an integral part of inverter design, traditionally take a “back seat ” ...
Local lifetime control is obtained by means of local platinum doping using platinum gettering throug...
This work presents different novel gate drive unit (GDU) concepts for IGBT and reverse conducting IG...
The work presented in this thesis contains an investigation into the methods by which the semiconduc...
This paper presents a new series of 1700V IGBT modules using the new trench gate IGBT technology cal...
The use of semiconductor components has come to play an important role in the development of modern ...
In this paper, we introduce our new high voltage IGBT HiPak module line-up with voltage ratings rang...
The in-depth analysis of the Semiconductor Power Electronics applications are essential for future d...
The drive towards the rational use of energy demands fast, reliable, efficient and low-cost power sw...
For the evolution of power electronics, it is essential to enhance the performance of Insulate Gate ...
Abstract: Following fast on the successful market introduction of the 1200V Soft-Punch-Through (SPT)...
This paper discusses the trade-off between surge-current capability on the one hand and reverse-reco...
The Trench Insulated Gate Bipolar Transistor (IGBT) is the most promising structure for the next gen...
In order to help improve performance, size and cost of high power electronic systems, the developmen...
This paper presents new gallium arsenide power Schottky diodes with blocking voltages of some hundre...
Fast recovery diodes, though an integral part of inverter design, traditionally take a “back seat ” ...
Local lifetime control is obtained by means of local platinum doping using platinum gettering throug...
This work presents different novel gate drive unit (GDU) concepts for IGBT and reverse conducting IG...
The work presented in this thesis contains an investigation into the methods by which the semiconduc...
This paper presents a new series of 1700V IGBT modules using the new trench gate IGBT technology cal...
The use of semiconductor components has come to play an important role in the development of modern ...
In this paper, we introduce our new high voltage IGBT HiPak module line-up with voltage ratings rang...
The in-depth analysis of the Semiconductor Power Electronics applications are essential for future d...
The drive towards the rational use of energy demands fast, reliable, efficient and low-cost power sw...