Abstract-An approximate two-order increase in magnitude in electroluminescence was observed for the metal-oxide-silicon tunneling diodes with oxide grown at 900 C, as compared to 1000 C. The x-ray reflectivity revealed that the oxide grown at 900 C has rougher interface than that grown at 1000 C. The role of interface roughness can be understood in a model composed of phonons and interface roughness. An external quantum efficiency of 10 6 was obtained using Al electrodes. Index Terms-Electroluminescence, metal oxide silicon diode, roughness
Electroluminescence (EL) is observed from the Au/Si-rich SiO2 film/p-Si diodes, in which the Si-rich...
Sandwich structures composed of metal and Si external layers with an intermediate embedded nanosize-...
In this thesis, a working novel silicon light emitting diode is demonstrated. Light emission in sili...
In many theoretical investigations of the electric-tunnel effect through an ultrathin oxide in metal...
Interface roughness effects on tunneling current in ultrathin MOS structures are investigated theore...
Electroluminescence (EL) spectra of nanoscale diodes formed after gate-oxide breakdown of n+-polysil...
Electrical transport and light emission properties of plasma-enhanced chemical vapor deposition grow...
Efficient infra-red and visible electroluminescence (EL) has been obtained from implanted rare earth...
Visible electroluminescence (EL) has been reported from semitransparent Au film/extra thin Si-rich s...
Visible electroluminescence (EL) has been observed from a Au/native oxide/p-Si diode and has been st...
Electro luminescence from MOS structures is investigated. Broadband visible light emission is observ...
\u3cp\u3eElectroluminescence (EL) spectra of nanoscale diodes formed after gate-oxide breakdown of n...
Metal-oxide-semiconductor (MOS) structures with very thin (2 - 4 nm) oxide layers thermally grown on...
Interface roughness effects on tunneling currentin ultrathin MOS structures are investigatedtheoreti...
[[abstract]]Enhanced electroluminescence (EL) of ITO/SiOx/Si-nanopyramid/p-Si/Al diode is investigat...
Electroluminescence (EL) is observed from the Au/Si-rich SiO2 film/p-Si diodes, in which the Si-rich...
Sandwich structures composed of metal and Si external layers with an intermediate embedded nanosize-...
In this thesis, a working novel silicon light emitting diode is demonstrated. Light emission in sili...
In many theoretical investigations of the electric-tunnel effect through an ultrathin oxide in metal...
Interface roughness effects on tunneling current in ultrathin MOS structures are investigated theore...
Electroluminescence (EL) spectra of nanoscale diodes formed after gate-oxide breakdown of n+-polysil...
Electrical transport and light emission properties of plasma-enhanced chemical vapor deposition grow...
Efficient infra-red and visible electroluminescence (EL) has been obtained from implanted rare earth...
Visible electroluminescence (EL) has been reported from semitransparent Au film/extra thin Si-rich s...
Visible electroluminescence (EL) has been observed from a Au/native oxide/p-Si diode and has been st...
Electro luminescence from MOS structures is investigated. Broadband visible light emission is observ...
\u3cp\u3eElectroluminescence (EL) spectra of nanoscale diodes formed after gate-oxide breakdown of n...
Metal-oxide-semiconductor (MOS) structures with very thin (2 - 4 nm) oxide layers thermally grown on...
Interface roughness effects on tunneling currentin ultrathin MOS structures are investigatedtheoreti...
[[abstract]]Enhanced electroluminescence (EL) of ITO/SiOx/Si-nanopyramid/p-Si/Al diode is investigat...
Electroluminescence (EL) is observed from the Au/Si-rich SiO2 film/p-Si diodes, in which the Si-rich...
Sandwich structures composed of metal and Si external layers with an intermediate embedded nanosize-...
In this thesis, a working novel silicon light emitting diode is demonstrated. Light emission in sili...