Add to ORKGKeywords: semiconductor quantum structures, quantum dots, analytical transmission electron microscopy, quantitative high-resolution transmission electron microscopy Abstract. Conventional transmission electron microscopy (CTEM) and quantitative highresolution transmission electron microscopy (qHRTEM) are applied to study semiconductor quantum structures. The potential of combined use of CTEM and qHRTEM will be discussed in detail for Ga(Sb,As) quantum dot structures. The possibilities and limitations of the procedures will be outlined
This chapter briefly describes the fundamentals of high-resolution electron microscopy techniques. I...
Microstructural and compositional characterisation of electronic materials in support of the develop...
High resolution transmission electron microscopy (HRTEM) has been extensively used as a structure ch...
The power of advanced transmission electron microscopy in determining the nanostructures and chemist...
The smart engineering of novel semiconductor devices relies on the development of optimized function...
Transmission electron microscopy was used to study InGaAs/GaAs and Ge(Si)/Si quantum dots. Results o...
We give an introduction to modern electron microscopy techniques, applied to semiconductor structure...
We investigated metal-organic vapor phase epitaxy grown (InGa)(AsSb)/GaAs/GaP Stranski–Krastanov qua...
This brief review describes the different types of semiconductor quantum dost systems, their main ap...
The InAs/GaAs quantum dots (QDs) covered by GaAsSb strain reducing layer (SRL) have suitable propert...
16th International Conference on Microscopy of Semiconducting MaterialsWe review in this communicati...
To shed light on these confined properties, a technique with a high energy-and-spatial resolution is...
Abstract. We demonstrate a possibility of using a scanning tunneling microscope (STM) for high spati...
due to their special mechanical, electrical and optical behavior. The correlation between these extr...
Structure and chemical composition of InAs/GaAs quantum dots and GaInNAs/GaAs quantum wells were inv...
This chapter briefly describes the fundamentals of high-resolution electron microscopy techniques. I...
Microstructural and compositional characterisation of electronic materials in support of the develop...
High resolution transmission electron microscopy (HRTEM) has been extensively used as a structure ch...
The power of advanced transmission electron microscopy in determining the nanostructures and chemist...
The smart engineering of novel semiconductor devices relies on the development of optimized function...
Transmission electron microscopy was used to study InGaAs/GaAs and Ge(Si)/Si quantum dots. Results o...
We give an introduction to modern electron microscopy techniques, applied to semiconductor structure...
We investigated metal-organic vapor phase epitaxy grown (InGa)(AsSb)/GaAs/GaP Stranski–Krastanov qua...
This brief review describes the different types of semiconductor quantum dost systems, their main ap...
The InAs/GaAs quantum dots (QDs) covered by GaAsSb strain reducing layer (SRL) have suitable propert...
16th International Conference on Microscopy of Semiconducting MaterialsWe review in this communicati...
To shed light on these confined properties, a technique with a high energy-and-spatial resolution is...
Abstract. We demonstrate a possibility of using a scanning tunneling microscope (STM) for high spati...
due to their special mechanical, electrical and optical behavior. The correlation between these extr...
Structure and chemical composition of InAs/GaAs quantum dots and GaInNAs/GaAs quantum wells were inv...
This chapter briefly describes the fundamentals of high-resolution electron microscopy techniques. I...
Microstructural and compositional characterisation of electronic materials in support of the develop...
High resolution transmission electron microscopy (HRTEM) has been extensively used as a structure ch...