Atomic layer deposition of zinc sulfide with Zn(TMHD)2 Atomic layer deposition of zinc sulfide with Zn(TMHD) 2

The atomic layer deposition (ALD) of ZnS films with Zn(TMHD) 2 and in situ generated H 2 S as precursors was investigated, over a temperature range of 150-375 C. ALD behavior was confirmed by investigation of growth behavior and saturation curves. The properties of the films were studied with atomic force microscopy, scanning electron microscopy, energy-dispersive x-ray spectroscopy, ultraviolet-visible-infrared spectroscopy, and extended x-ray absorption fine structure. The results demonstrate a film that can penetrate a porous matrix, with a local Zn structure of bulk ZnS, and a band gap between 3.5 and 3.6 eV. The ZnS film was used as a buffer layer in nanostructured PbS quantum dot solar cell devices