First-principles calculations based on density-functional theory have been applied to the energies and atomic and electronic structures of various metal/inorganic material interfaces such as metal/Al 2 O 3 , Au/TiO 2 and metal/SiC interfaces used in thermal barrier coatings, gold catalysts, and high-power electronic devices, respectively, in collaboration with electron microscopy observations. In each system, it has been shown that the interface stoichiometry, namely the features of interfacial termination species of inorganic materials, as well as the metal species, is one of the most important factors to design the interfacial structure and the adhesive, mechanical, chemical and electronic properties. Recent electron microscopy observatio...
this document: In Chapter 2 we discuss the computational methods employed herein. We start with an o...
The electronic structure of the interface between α-Al2O3 (0001) and Nb layers has been calculated u...
A number of electronic devices involve metal/oxide interfaces in their structure where the oxide lay...
{l_brace}222{r_brace}MgO/Cu is one of the most extensively characterized ceramic/metal interfaces, i...
{l_brace}222{r_brace}MgO/Cu is one of the most extensively characterized ceramic/metal interfaces, w...
SiC/Fe and MoSi2/Ni interfaces are investigated using first principles calculations in order to dete...
The atomic structure of the (310) symmetric tilt grain boundary in Nb and of an interface between Mo...
The continuous downward scaling of electronic devices has renewed attention on the importance of the...
In order to understand the bonding between metals and oxides, interfaces were studied with high-reso...
This thesis deals with the atomic structure of interfaces between metals and oxides. A principal fea...
This thesis deals with two closely interwoven aspects of first-principle (density functional theory)...
In this thesis the electronic and structural properties of the Au/Si and Pb/Si interfaces have been ...
128 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2001.Although we find significant ...
The presented research is an atomistic, computer modeling study of structure and energetics of inter...
The methods available to study the correlation between properties and atomic structure of interfaces...
this document: In Chapter 2 we discuss the computational methods employed herein. We start with an o...
The electronic structure of the interface between α-Al2O3 (0001) and Nb layers has been calculated u...
A number of electronic devices involve metal/oxide interfaces in their structure where the oxide lay...
{l_brace}222{r_brace}MgO/Cu is one of the most extensively characterized ceramic/metal interfaces, i...
{l_brace}222{r_brace}MgO/Cu is one of the most extensively characterized ceramic/metal interfaces, w...
SiC/Fe and MoSi2/Ni interfaces are investigated using first principles calculations in order to dete...
The atomic structure of the (310) symmetric tilt grain boundary in Nb and of an interface between Mo...
The continuous downward scaling of electronic devices has renewed attention on the importance of the...
In order to understand the bonding between metals and oxides, interfaces were studied with high-reso...
This thesis deals with the atomic structure of interfaces between metals and oxides. A principal fea...
This thesis deals with two closely interwoven aspects of first-principle (density functional theory)...
In this thesis the electronic and structural properties of the Au/Si and Pb/Si interfaces have been ...
128 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2001.Although we find significant ...
The presented research is an atomistic, computer modeling study of structure and energetics of inter...
The methods available to study the correlation between properties and atomic structure of interfaces...
this document: In Chapter 2 we discuss the computational methods employed herein. We start with an o...
The electronic structure of the interface between α-Al2O3 (0001) and Nb layers has been calculated u...
A number of electronic devices involve metal/oxide interfaces in their structure where the oxide lay...