Design and fabrication of a segmented Slot waveguide modulator for InP membranes on silicon (IMOS) using a highly doped InGaAsP-layer Citation for published version (APA): Design and Fabrication of a segmented Slot waveguide modulator for InP membranes on

. (2015). Design and fabrication of a segmented Slot waveguide modulator for InP membranes on silicon (IMOS) using a highly doped InGaAsPlayer. In P. Kockaert, P. Emplit, S-P. Gorza, & S. Massar (Eds.), Proceedings of the 20th Annual Symposium of the Benelux IEEE Photonics Society, 26-27 November 2015, Brussels, Belgium (pp. 19-22). Brussels: OPERAphotonics, Brussels School of Engineering. Document status and date: Published: 01/01/2015 Document Version: Publisher's PDF, also known as Version of Record (includes final page, issue and volume numbers) Please check the document version of this publication: • A submitted manuscript is the version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website. • The final author version and the galley proof are versions of the publication after peer review. • The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rights Copyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights. • Users may download and print one copy of any publication from the public portal for the purpose of private study or research. • You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal. If the publication is distributed under the terms of Article 25fa of the Dutch Copyright Act, indicated by the "Taverne" license above, please follow below link for the End User Agreement: Slot waveguide based modulators with highly nonlinear electro-optical polymers are attractive for use in optical interconnects. These devices typically use a bottom layer with a moderate doping level for electrical contacting. This thin layer is defined with highly controlled etching. Here we present a segmented slot waveguide where electrical contacts are obtained with a thin highly doped InGaAsP-layer on top, making the fabrication much simpler. These waveguides present a quasi-continuous electrical contact due to subwavelength segmentation. The high conductivity of the top layer allows high performance devices ( V π L = 0.9V mm , energy consumption 63 f J/bit , RC bandwidth > 35GHz)