On the Development of CAD Techniques Suitable for the Design of High-Power RF Transistors

Abstract-A full-wave modeling procedure was developed to simulate the package, bonding-wires and MOS capacitors used in the design of matching networks found within RF/microwave power transistors. The complex packaging environment was segmented into its constituent components and simulation techniques were developed for each component, as well as the inter-element coupling. An S-parameter test-fixture and package was developed which permits measurements of these types of devices. The simulation and measurement procedures were used to model various circuits. Measured S-parameters and those obtained using the full-wave methodology were in good agreement. Simulation results using an inductance only bonding-wire model were performed and differences between the S-parameters were observed. A detailed examination of the loss introduced by the matching network was performed and simulations and measurements are in good agreement