Abstract-Electroplated Cu films are known to change their microstructure at room temperature due to the self-annealing effect. This recrystallization process results in a film-thicknessdependent stress evolution. Films with the thickness of 5µm and below decrease in stress with time, while thicker films reveal initially an increase in film stress followed by a stress relaxation at a later stage. This behavior is explained by the superposition of grain growth and grain size dependent yielding. Existing models have been used and improved to describe the mechanisms related to stress evolution. In general, the models proposed in this study provide a satisfactory description of the stress evolution of electroplated Cu films and the simulated res...
In this work, the impact of pulse electroplating parameters on the cross-sectional and surface micro...
Microstructural evolution during elevated temperature annealing of sputter deposited copper (Cu) fil...
A study on the self-annealing of electrolessly deposited copper films on blanket TiN wafers was car...
Abstract-The self-annealing effect of electroplated copper films was investigated by measuring the t...
In modern microelectronics, material related issues emerge as new technologies are introduced. The p...
Copper films of different thicknesses between 0.2 and 2 microns were electroplated on adhesion-promo...
Copper interconnects in advanced integrated circuits are manufactured by processes that include elec...
Cu interconnects are essential in advanced integrated circuits to minimize the RC delay. In manufact...
This thesis presents an investigation of the effects of additives on kinetics of deposition and mic...
Microstructure evolution in thin Cu films during room temperature self-annealing is investigated by ...
abstract: Current solar cells use a silver-printed front grid for electron conduction. Unfortunately...
We report on the results of a multi-laboratory study to measure the steady state growth stress of pl...
Cu thin films were deposited on Si substrates using direct current (DC) magnetron sputtering. Micros...
Highly (111)-oriented nanotwinned Cu (nt-Cu) films were fabricated on silicon wafers for thermal-str...
Copper films of different thicknesses of 0.2, 0.5, 1 and 2 microns were electroplated on top of the ...
In this work, the impact of pulse electroplating parameters on the cross-sectional and surface micro...
Microstructural evolution during elevated temperature annealing of sputter deposited copper (Cu) fil...
A study on the self-annealing of electrolessly deposited copper films on blanket TiN wafers was car...
Abstract-The self-annealing effect of electroplated copper films was investigated by measuring the t...
In modern microelectronics, material related issues emerge as new technologies are introduced. The p...
Copper films of different thicknesses between 0.2 and 2 microns were electroplated on adhesion-promo...
Copper interconnects in advanced integrated circuits are manufactured by processes that include elec...
Cu interconnects are essential in advanced integrated circuits to minimize the RC delay. In manufact...
This thesis presents an investigation of the effects of additives on kinetics of deposition and mic...
Microstructure evolution in thin Cu films during room temperature self-annealing is investigated by ...
abstract: Current solar cells use a silver-printed front grid for electron conduction. Unfortunately...
We report on the results of a multi-laboratory study to measure the steady state growth stress of pl...
Cu thin films were deposited on Si substrates using direct current (DC) magnetron sputtering. Micros...
Highly (111)-oriented nanotwinned Cu (nt-Cu) films were fabricated on silicon wafers for thermal-str...
Copper films of different thicknesses of 0.2, 0.5, 1 and 2 microns were electroplated on top of the ...
In this work, the impact of pulse electroplating parameters on the cross-sectional and surface micro...
Microstructural evolution during elevated temperature annealing of sputter deposited copper (Cu) fil...
A study on the self-annealing of electrolessly deposited copper films on blanket TiN wafers was car...