Synthesis and Characterization of Multiferroic BiFeO₃ for Data Storage

Multiferroic BiFeO3 deals with spintronic devices involved spin-charge processes and applicable in new non-volatile memory devices to store information for computing performance and the magnetic random access memories storage. Since multiferroic leads to the new generation memory devices for which the data can be written electrically and read magnetically. The main advantage of present study of multiferroic BiFeO3 is that to observe magnetoelectric effects at room temperature. The nanostructural growth (for both size and shape) of BiFeO3 may depend on the selection of appropriate synthesis route, reaction conditions and heating processes. In pure BiFeO3, the ferroelectricity is induced by 6s2 lone-pair electrons of Bi3+ ions and the G-type antiferromagnetic ordering resulting from Fe3+ spins order of cycloidal (62-64 nm wavelength) occurred below Neel temperature, TN = 640 K. The multiferroicity of BiFeO3 is disappeared due to factors such as impurity phases, leakage current and low value of magnetization. Therefore, to overcome such factors to get multiferroic enhancement in BiFeO3, there are different possible ways like changes dopant ions and their concentrations, BiFeO3 composites as well as thin films especially multilayers