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Investigation of defects in high-energy heavy ion implanted GaAs

Chen
ZQWang
ZWang
SJHou
MDVACANCIES
SI
SEMICONDUCTORS
ACCEPTORS
LIFETIME
DAMAGE

Publication date

January 2000

DOI

10.1016/s0969-8043(99)00141-4

ISSN

0969-8043

Abstract

Undoped semi-insulating GaAs were implanted with 500 MeV Ne ions. Monte Undoped semi-insulating GaAs were implanted with 500 MeV Ne ions. Mont

Extracted data

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