Temperature effects of CsI(Tl) crystal detector with APD readout

Chen, RF (Chen Ruo-Fu)
Fan, RR (Fan Rui-Rui)
Xu, HS (Xu Hu-Shan)
Zhan, WL (Zhan Wen-Long)
Li, SL (Li Song-Lin)
Xiao, ZG (Xiao Zhi-Gang)
Xiao, GQ (Xiao Guo-Qing)
Hu, ZG (Hu Zheng-Guo)
Huang, TH (Huang Tian-Heng)
Zhang, XH (Zhang Xue-Heng)
Zheng, C (Zheng Chuan)
Fu, F (Fu Fen)
Jia, F (Jia Fei)
Yue, K (Yue Ke)
Ouyang, Z (Ouyang Zhen)

Publication date

January 3929

Abstract

The temperature dependences of the light output of CsI(Tl) crystal grown at IMP and of the gain of the Hamamatsu S8664-1010 avalanche photodiode (APD) have been investigated systematically. The light output of the CsI(Tl) crystal increases with temperature by 0.67%/degrees C in the region from -2 degrees C to 8 degrees C, and by 0.33%/degrees C in the region from 8 degrees C to 25 degrees C, while the gain of the tested APD decreases by -3.68%/degrees C (working voltage 400V) on average in the room temperature range. The best energy resolution 5.1% of the CsI(Tl) with APD was obtained for the 662keV gamma ray from Cs-137 radiation source