Annealing effects in silicon implanted with helium
- Li, BS (Li, Bingsheng)
- Zhang, CH (Zhang, Chonghong)
- Zhou, LH (Zhou, Lihong)
- Yang, YT (Yang, Yitao)
- Zhang, HH (Zhang, Honghua)
DOIAbstract
Silicon samples were implanted with helium and analyzed by atomic force microscopy (AFM) and Raman spectroscopy before and after annealing in the range of 523-1273 K. After annealing at 523 K, the amorphous area induced by He-ion implantation at room temperature was partially recovered and grain sizes became larger. The surface morphology was analyzed through AFM measurements and it was observed that root mean square of the surface roughness alters upwards and then downwards with annealing temperature. (C) 2008 Elsevier B.V. All rights reserved.National Natural Science Foundation of China 1057512
Add to ORKG