Modification of ZnO films under high energy Xe-ion irradiations
- Zang, H (Zang, H.)
- Wang, ZG (Wang, Z. G.)
- Peng, XP (Peng, X. P.)
- Song, Y (Song, Y.)
- Liu, CB (Liu, C. B.)
- Wei, KF (Wei, K. F.)
- Zhang, CH (Zhang, C. H.)
- Yao, CF (Yao, C. F.)
- Ma, YZ (Ma, Y. Z.)
- Zhou, LH (Zhou, L. H.)
- Sheng, YB (Sheng, Y. B.)
- Gou, J (Gou, J.)
DOIAbstract
ZnO films were deposited on (100) Si substrate by radio frequency magnetron sputtering. These films were irradiated at room temperature with 308 MeV Xe-ions to a fluence of 1.0 x 10(12), 1.0 x 10(13) or 1.0 x 10(14) Xe/cm(2). Then the samples were investigated using RBS, XRD, FESEM and PL analyses. The obtained experimental results showed that the deposited ZnO films were highly c-axis orientated and of high purity, 308 MeV Xe-ion irradiations could not change the c-axis oriented. The topography and PL properties of the ZnO films varied with increasing the Xe-ion irradiation fluence. For 1.0 x 10(13) or 1.0 x 10(14) Xe/cm(2) irradiated samples, surface cracks were observed. Furthermore, it was found that the 1.0 x 10(14) Xe/cm(2) irradiated...
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