A comparison of 75 MeV boron and 50 MeV lithium ion irradiation effects on 200 GHz SiGe HBTs
- Praveen, K. C.
- Pushpa, N.
- Shiva, H. B.
- Cressler, J. D.
- Tripathi, A.
- Gnana Prakash, A. P.
Publication date
January 2013
DOI Publisher
AIP Publishing Citation count (estimate)
2Abstract
The third generation Silicon-Germanium Heterojunction Bipolar Transistors (200 GHz SiGe HBTs) were irradiated with 50 MeV Lithium and 75 MeV Boron ions in the dose ranging from 1 Mrad to 100 Mrad. The different electrical characteristics like forward-mode Gummel characteristics, inverse-mode Gummel characteristics, excess base current and current gain were studied before and after ion irradiation. The damage constants for 50 MeV Li3+ and 100 MeV B5+ ion irradiated SiGe HBTs were calculated using Messenger-Spratt equation
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