An investigation of electron and oxygen ion damage in Si npn RF power transistors

The effects of 8MeV electrons and 60 and 95MeV oxygen ions on the electrical properties of Si npn RF power transistors have been investigated as a function of fluence. The dc current gain (hFE), displacement damage factor, excess base current ( IB=IBpost-IBpre), excess collector current ( IC=ICpost-ICpre), collector saturation current (ICS) and deep level transient spectroscopy trap signatures of the irradiated transistors were systematically evaluated