Recovery of electrical characteristics of 80 MeV carbon ion irradiated SiGe HBTs by mixed mode electrical stress

The SiGe HBTs were irradiated with 80 MeV Carbon ions up to 100 Mrad of total dose and were subjected to mixed mode (MM) electrical stress. The DC electrical characteristics were studied for irradiated and MM stressed SiGe HBTs. The base current (IB) of the irradiated SiGe HBTs was significantly increased after 100 Mrad of total dose and in turn, decrease the current gain (hFE). A significant recovery in IB and hFE was observed for ion irradiated SiGe HBTs after MM stress. The recovery in electrical characteristics of the irradiated SiGe HBTs is mainly due to the raise in the junction temperature