Electrical Characterization of a Thin Edgeless N-on-p Planar Pixel Sensors For ATLAS Upgrades
- M. BombenLaboratoire de Physique Nucleaire et de Hautes Énergies
- A. Bagolini(Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi)
- M. Boscardin(Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi)
- L. Bosisio(Università di Trieste, Dipartimento di Fisica and INFN, Trieste, Italy)
- G. Calderini(Laboratoire de Physique Nucleaire et de Hautes Énergies)
- J. Chauveau(Laboratoire de Physique Nucleaire et de Hautes Énergies)
- G. Giacomini(Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi)
- A. La Rosa(Section de Physique)
- G. Marchori(Laboratoire de Physique Nucleaire et de Hautes Énergies)
- N. Zorzi(Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi)
Publication date
October 2015
DOIAbstract
In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. Because of its radiation hardness and cost effectiveness, the n-on-p silicon technology is a promising candidate for a large area pixel detector. The paper reports on the joint development, by LPNHE and FBK of novel n-on-p edgeless planar pixel sensors, making use of the active trench concept for the reduction of the dead area at the periphery of the device. After discussing the sensor technology, and presenting some sensors' simulation results, a complete overview of the electrical characterization of the produced devices will be given
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