Strained Si and SiGe Nanowire Tunnel FETs for Logic and Analog Applications

Guided by the Wentzel-Kramers-Brillouin approximation for band-to-band tunneling (BTBT), various performance boosters for Si TFETs are presented and experimentally verified. Along this line, improvements achieved by the implementation of uniaxial strain in nanowires (NW), the benefits of high-k/metal gates, and newly engineered tunneling junctions as well as the effect of scaling the NW to diameters of 10 nm are demonstrated. Specifically, self-aligned ion implantation into the source/drain silicide and dopant segregation has been exploited to achieve steep tunneling junctions with less defects. The obtained devices deliver high on-currents, e.g., gate-all-around (GAA) NW p-TFETs with 10 nm diameter show ID = 64 μA/μm at VDS = VGS - Voff = -1.0 V, and good inverse subthreshold slopes (SS). Tri-gate TFETs reach minimum SS of 30 mV/dec. Dopant segregation helps to minimize the defect density in the junction and thus trap assisted tunneling (TAT) is reduced. Pulsed current-voltage (I-V) measurements have been used to investigate TAT. We could show that scaled NW devices with multigates are less vulnerable to TAT compared to planar devices due to a shorter tunneling path enabled by the inherently good electrostatics. Furthermore, SiGe NW homo- and heterojunction TFETs have been investigated. The advantages of a SiGe/Si heterostructure as compared to a homojunction device are revealed and the effect of line tunneling which results in an increased BTBT generation is demonstrated. It is also shown that complementary strained Si TFET inverters and p-TFET NAND gates can be operated at VDD as low as 0.2 V. This suggests a great potential of TFETs for ultralow power applications. The analysis of GAA NW TFETs for analog applications provided a high transconductance efficiency and large intrinsic gain, even higher than for state-of-the-art 20 nm FinFETs at low voltages