Improved LDMOS performance with buried multi-finger gates
- Xu, Dawei
- Cheng, Xinhong
- Yu, Yuehui
- Wang, Zhongjian
- Cao, Duo
- Xia, Chao
- Liu, Linjie
- Trellenkamp, Stefan
- Mantl, Siegfried
- Zhao, Qing-Tai
Publication date
January 2014
DOI Publisher
Elsevier BV ISSN
0167-9317 Citation count (estimate)
2Abstract
SOI LDMOS with buried multi-finger gates (BFG) is proposed and fabricated. The BFG acts as field plate, modulating the lateral electric field distribution in the drift region (off-state) and enhances the carrier accumulation at the surface of the drift region (on-state). The proposed BFG SOI LDMOS shows a 13.6% increase of breakdown voltage, 24.4% reduction of on-resistance and 14.4% increase of the transconductance compared with the reference SOI LDMOS without BFG
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