A comparative study on the strain rate sensitivity behaviour of magnetron sputtered Al, Al-Si and Al-Si-N thin film deposited on stainless steel 304 substrate was carried out. Strain rate sensitivity and activation volume can provide a clear picture regarding the time dependent deformation mechanisms taking place in a material. The variation of the two key parameters, strain rate sensitivity and activation volume were investigated for the films of metal Al, metal alloy Al-Si and Al-Si-N nanocomposite coatings. As strain rate have a significant impact on the creep phenomenon and different materials respond differently when subjected to varying strain rates, a brief study on the creep behaviour is also presented here. The mechanical behaviour...
In this work (Ti,Si,Al)N films were deposited using only rf or a combination of rf and d.c. reactive...
Ductility, defined as the strain at the onset of necking, has been characterized in thin Al films us...
Aluminosilicate (Al-Si-O) thin films containing up to 31 at. % Al and 23 at. % Si were prepared by r...
Magnetron sputtered Al–Si–N thin films with varying silicon content were developed by Al–Si target w...
Mechanical behavior of 6082T6 aluminum is investigated at different temperatures. The strain rate se...
Hard and optically transparent nanocomposite Al-Si-N thin films were deposited using DC magnetron sp...
Creep is expected to be a major reliability problem in some MEMS, as for example RF-MEMS switches, e...
International audiencehe mechanical properties (Young’s modulus, hardness, wear resistance) of alumi...
(Ti,Si,Al)N nanocomposite coatings with different Ti, Si, Al contents, were deposited onto silicon a...
A novel stress relaxation technique dedicated to thin freestanding films has been developed as an ex...
The thermo-mechanical behaviour in tension of three as-cast and homogenized Al-Mg-Si alloys, disting...
Creep properties of polycrystalline Tin (Sn) and single crystal Aluminium (Al) were studied by two n...
The effect of strain rate on the inelastic properties of nanocrystalline Au films was quantified wit...
The mechanical properties of the thin film materials used in RF-MEMS are crucial for the reliability...
Aluminosilicate (Al–Si–O) thin films containing up to 31 at.% Al and 23 at.% Si were prepared by rea...
In this work (Ti,Si,Al)N films were deposited using only rf or a combination of rf and d.c. reactive...
Ductility, defined as the strain at the onset of necking, has been characterized in thin Al films us...
Aluminosilicate (Al-Si-O) thin films containing up to 31 at. % Al and 23 at. % Si were prepared by r...
Magnetron sputtered Al–Si–N thin films with varying silicon content were developed by Al–Si target w...
Mechanical behavior of 6082T6 aluminum is investigated at different temperatures. The strain rate se...
Hard and optically transparent nanocomposite Al-Si-N thin films were deposited using DC magnetron sp...
Creep is expected to be a major reliability problem in some MEMS, as for example RF-MEMS switches, e...
International audiencehe mechanical properties (Young’s modulus, hardness, wear resistance) of alumi...
(Ti,Si,Al)N nanocomposite coatings with different Ti, Si, Al contents, were deposited onto silicon a...
A novel stress relaxation technique dedicated to thin freestanding films has been developed as an ex...
The thermo-mechanical behaviour in tension of three as-cast and homogenized Al-Mg-Si alloys, disting...
Creep properties of polycrystalline Tin (Sn) and single crystal Aluminium (Al) were studied by two n...
The effect of strain rate on the inelastic properties of nanocrystalline Au films was quantified wit...
The mechanical properties of the thin film materials used in RF-MEMS are crucial for the reliability...
Aluminosilicate (Al–Si–O) thin films containing up to 31 at.% Al and 23 at.% Si were prepared by rea...
In this work (Ti,Si,Al)N films were deposited using only rf or a combination of rf and d.c. reactive...
Ductility, defined as the strain at the onset of necking, has been characterized in thin Al films us...
Aluminosilicate (Al-Si-O) thin films containing up to 31 at. % Al and 23 at. % Si were prepared by r...