With the rapid development of technologies, the third generation semiconductor is being studied, as it is leading to the significant change in industry like the manufacture of PC, mobile devices, lighting etc. Till now, due to its irreplaceable physical characteristics, third generation semiconductor is applied to lots of fields. This paper analyzes the application of third generation semiconductor, namely, GaN and SiC. Their characteristics including advantages as well as disadvantages will be discussed through reviewing the result of relevant researches. Meanwhile, comparison between the third generation semiconductors and the second as well as the first generation semiconductors is made in this paper. Through the comparison of physical c...
With the development of power electronics industry, silicon-based devices have gradually approached ...
Abstract:The development of high voltage, high current density and high temperature power devices ar...
Thesis: M. Eng., Massachusetts Institute of Technology, Department of Materials Science and Engineer...
Third-generation wide-bandgap semiconductor materials feature a wide bandgap, excellent breakdown el...
The expansion of the electric vehicle market is driving the request for efficient and reliable power...
SiC and GaN devices have been around for some time. The first dedicated international conference on ...
This article provides a comprehensive review of wide and ultrawide bandgap power electronic semicond...
International audienceSilicon (Si) power devices have dominated theworld of Power Electronics in the...
Silicon carbide (SiC) and gallium nitride (GaN) are typical representative of the wide band-gap semi...
The world of electronics industry has been increasing rapidly and expanding widely in the past three...
© 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for a...
Compared to conventional Silicon (Si) transistors, wide-bandgap transistors based on Silicon Carbide...
Trends in the design and technology of power semiconductor devices are discussed on the threshold of...
© 2015 Materials Research Society. Greener technologies for more efficient power generation, distrib...
Switching devices are key components in any power electronic circuit or system as they control and l...
With the development of power electronics industry, silicon-based devices have gradually approached ...
Abstract:The development of high voltage, high current density and high temperature power devices ar...
Thesis: M. Eng., Massachusetts Institute of Technology, Department of Materials Science and Engineer...
Third-generation wide-bandgap semiconductor materials feature a wide bandgap, excellent breakdown el...
The expansion of the electric vehicle market is driving the request for efficient and reliable power...
SiC and GaN devices have been around for some time. The first dedicated international conference on ...
This article provides a comprehensive review of wide and ultrawide bandgap power electronic semicond...
International audienceSilicon (Si) power devices have dominated theworld of Power Electronics in the...
Silicon carbide (SiC) and gallium nitride (GaN) are typical representative of the wide band-gap semi...
The world of electronics industry has been increasing rapidly and expanding widely in the past three...
© 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for a...
Compared to conventional Silicon (Si) transistors, wide-bandgap transistors based on Silicon Carbide...
Trends in the design and technology of power semiconductor devices are discussed on the threshold of...
© 2015 Materials Research Society. Greener technologies for more efficient power generation, distrib...
Switching devices are key components in any power electronic circuit or system as they control and l...
With the development of power electronics industry, silicon-based devices have gradually approached ...
Abstract:The development of high voltage, high current density and high temperature power devices ar...
Thesis: M. Eng., Massachusetts Institute of Technology, Department of Materials Science and Engineer...