The electronic structure of CdMeTe nanostructures was studied by a variety of techniques of secondary and photoelectron spectroscopy. Particularly, for the first time it has been shown that in the conductivity band of the CdZnTe films there are maximums peaks of free electronic states with energies 3.5 and 4.4 eV relative Ev
The deep levels present in semiconducting CdTe and semi-insulating CdTe:Cl and Cd0.8Zn0.2Te have bee...
The development of a replacement to the conventional film based X-ray imaging technique is required ...
CdTe and CdZnTe are promising materials for room temperature semiconductor X-ray and gamma ray detec...
The electronic structure of CdMeTe nanostructures was studied by a variety of techniques of secondar...
The CdTe(100) c(2×2) surface prepared by ion bombardment and annealing was investigated by angle-res...
Unreconstructed CdTe(100) surface prepared by ion bombardment and annealing is investigated by angle...
Angle-resolved uv photoelectron spectroscopy has been used to study the electronic structure of clea...
The photoluminescence (PL) quantum yield of semiconductor nanocrystals (NCs) is hampered by in-gap t...
This work explores the electronic states of CdTe semiconductor nanoparticles (NPs) that are immobili...
The electrical properties of CdZnTe radiation detectors are largely determined by electron and hole ...
133-135The preparation, structural, compositional and optical studies of cadmium zinc telluride (CdZ...
The electronic structure of Cd0.985Fe0.015Te has been studied by resonant photoemission in the synch...
The photoluminescence (PL) quantum yield of semiconductor nanocrystals (NCs) is hampered by in-gap t...
The synchrotron radiation was used to apply tunable high energy X-ray photoemission spectroscopy for...
The electronic structure of well-ordered single-crystal thin films of CdO(100) has been studied usin...
The deep levels present in semiconducting CdTe and semi-insulating CdTe:Cl and Cd0.8Zn0.2Te have bee...
The development of a replacement to the conventional film based X-ray imaging technique is required ...
CdTe and CdZnTe are promising materials for room temperature semiconductor X-ray and gamma ray detec...
The electronic structure of CdMeTe nanostructures was studied by a variety of techniques of secondar...
The CdTe(100) c(2×2) surface prepared by ion bombardment and annealing was investigated by angle-res...
Unreconstructed CdTe(100) surface prepared by ion bombardment and annealing is investigated by angle...
Angle-resolved uv photoelectron spectroscopy has been used to study the electronic structure of clea...
The photoluminescence (PL) quantum yield of semiconductor nanocrystals (NCs) is hampered by in-gap t...
This work explores the electronic states of CdTe semiconductor nanoparticles (NPs) that are immobili...
The electrical properties of CdZnTe radiation detectors are largely determined by electron and hole ...
133-135The preparation, structural, compositional and optical studies of cadmium zinc telluride (CdZ...
The electronic structure of Cd0.985Fe0.015Te has been studied by resonant photoemission in the synch...
The photoluminescence (PL) quantum yield of semiconductor nanocrystals (NCs) is hampered by in-gap t...
The synchrotron radiation was used to apply tunable high energy X-ray photoemission spectroscopy for...
The electronic structure of well-ordered single-crystal thin films of CdO(100) has been studied usin...
The deep levels present in semiconducting CdTe and semi-insulating CdTe:Cl and Cd0.8Zn0.2Te have bee...
The development of a replacement to the conventional film based X-ray imaging technique is required ...
CdTe and CdZnTe are promising materials for room temperature semiconductor X-ray and gamma ray detec...