The influence of a buffer layer in the surface of a Cu(In,Ga)Se2 (CIGS) solar cell material is studied using implanted positive muons as a probe. A depth resolved analysis of the muon data suggests that both CdS and ZnSnO reduce the width of a defect layer present at the CIGS surface to about half its original value. Additionaly, CdS is able to reduce the intensity of the distur¬bance in the defected region, possibly due to a surface reconstrution in CIGS
CdS is conventionally used as a buffer layer in Cu(In,Ga)Se2, CIGS, solar cells. The aim of this the...
CdS is conventionally used as a buffer layer in Cu(In,Ga)Se2, CIGS, solar cells. The aim of this the...
CdS and Zn O,S grown by chemical bath deposition CBD are well established buffer materials for Cu...
The influence of a buffer layer in the surface of a Cu(In,Ga)Se2 (CIGS) solar cell material is studi...
The influence of a buffer layer in the surface of a Cu(In,Ga)Se2 (CIGS) solar cell material is studi...
Thin film solar cells based on Cu(In,Ga)Se2 (CIGS), where just the buffer layer is changed, were fab...
The search for alternatives to the CdS buffer layer in Cu(In,Ga)Se2 (CIGS) solar cells has turned ou...
Thin films and p n junctions for solar cells based on the absorber materials Cu In,Ga Se2 and Cu2ZnS...
Thin films and p n junctions for solar cells based on the absorber materials Cu In,Ga Se2 and Cu2ZnS...
Thin films and p n junctions for solar cells based on the absorber materials Cu In,Ga Se2 and Cu2ZnS...
Zn0.85Mg0.15O buffer layers can replace both i ZnO and CdS in n ZnO i ZnO CdS Cu In,Ga S,Se 2 Mo g...
In conventional Cu In,Ga Se2 CIGSe solar cells a chemical bath deposited CdS thin film is used as ...
Thin films and p-n junctions for solar cells based on the absorber materials Cu(In,Ga)Se2 and Cu2ZnS...
Cu(In1-xGax)Se2 (CIGS) is a direct band gap semiconductor widely used in photovoltaic (PV) energy co...
The chalcopyrite semiconductor CuInSe2 and its constitutes Ga and/or S [Cu (InGa)Se2 or Cu (InGa)(Se...
CdS is conventionally used as a buffer layer in Cu(In,Ga)Se2, CIGS, solar cells. The aim of this the...
CdS is conventionally used as a buffer layer in Cu(In,Ga)Se2, CIGS, solar cells. The aim of this the...
CdS and Zn O,S grown by chemical bath deposition CBD are well established buffer materials for Cu...
The influence of a buffer layer in the surface of a Cu(In,Ga)Se2 (CIGS) solar cell material is studi...
The influence of a buffer layer in the surface of a Cu(In,Ga)Se2 (CIGS) solar cell material is studi...
Thin film solar cells based on Cu(In,Ga)Se2 (CIGS), where just the buffer layer is changed, were fab...
The search for alternatives to the CdS buffer layer in Cu(In,Ga)Se2 (CIGS) solar cells has turned ou...
Thin films and p n junctions for solar cells based on the absorber materials Cu In,Ga Se2 and Cu2ZnS...
Thin films and p n junctions for solar cells based on the absorber materials Cu In,Ga Se2 and Cu2ZnS...
Thin films and p n junctions for solar cells based on the absorber materials Cu In,Ga Se2 and Cu2ZnS...
Zn0.85Mg0.15O buffer layers can replace both i ZnO and CdS in n ZnO i ZnO CdS Cu In,Ga S,Se 2 Mo g...
In conventional Cu In,Ga Se2 CIGSe solar cells a chemical bath deposited CdS thin film is used as ...
Thin films and p-n junctions for solar cells based on the absorber materials Cu(In,Ga)Se2 and Cu2ZnS...
Cu(In1-xGax)Se2 (CIGS) is a direct band gap semiconductor widely used in photovoltaic (PV) energy co...
The chalcopyrite semiconductor CuInSe2 and its constitutes Ga and/or S [Cu (InGa)Se2 or Cu (InGa)(Se...
CdS is conventionally used as a buffer layer in Cu(In,Ga)Se2, CIGS, solar cells. The aim of this the...
CdS is conventionally used as a buffer layer in Cu(In,Ga)Se2, CIGS, solar cells. The aim of this the...
CdS and Zn O,S grown by chemical bath deposition CBD are well established buffer materials for Cu...