Stoichiometric microcrystalline silicon carbide (μc-SiC:H) thin films prepared by Hot Wire Chemical Vapor Deposition (HWCVD) at low substrate temperature (< 300 °C) have been successfully applied in microcrystalline silicon (μc-Si:H) thin film solar cells as the window layers. These cells have the configuration of n-i-p and get illuminated from n-side. The influence of the μc-SiC:H window layer thickness on the cell performance is investigated to optimize the performance of the window layer. It is demonstrated that μc-SiC:H window layers show not only high transparency but also an anti-reflection effect in μc-Si:H thin film solar cells
N-type microcrystalline silicon carbide (μc-SiC:H(n)) is a wide bandgap material that is very promis...
The effects of multi-layered p-type microcrystalline (μc-) Si:H windows on the performance of substr...
The effects of multi-layered p-type microcrystalline (μc-) Si:H windows on the performance of substr...
Microcrystalline silicon-carbide (mu c-SiC:H) films were prepared using hot wire chemical vapor depo...
Microcrystalline silicon carbide (mu c-SiC:H) window layers prepared by Hot-Wire Chemical Vapor Depo...
Crystalline silicon carbide alloys have a very high potential as transparent conductive window layer...
Microcrystalline silicon carbide (mu c-SiC:H) thin films in stoichiometric form were deposited from ...
To optimize the performance of microcrystalline silicon carbide (mu c-SiC:H) window layers in n-i-p ...
Microcrystalline silicon carbide (mu c-SiC) films were prepared using hot wire chemical vapor deposi...
Al-doped p-type microcrystalline silicon carbide (µc-SiC:H) thin films were deposited by hot-wire ch...
Wide gap n-type microcrystalline silicon carbide [μc-SiC:H(n)] is highly suitable as window layer ma...
Highly crystalline microcrystalline silicon carbide (μc-SiC:H) with excellent optoelectronic materia...
We investigated the antireflective (AR) effect of hydrogenated nanocrystalline cubic silicon carbide...
Microcrystalline silicon (muc-Si:H) prepared by hot-wire chemical vapour deposition (HWCVD) at low s...
The effects of multi-layered p-type microcrystalline (μc-) Si:H windows on the performance of substr...
N-type microcrystalline silicon carbide (μc-SiC:H(n)) is a wide bandgap material that is very promis...
The effects of multi-layered p-type microcrystalline (μc-) Si:H windows on the performance of substr...
The effects of multi-layered p-type microcrystalline (μc-) Si:H windows on the performance of substr...
Microcrystalline silicon-carbide (mu c-SiC:H) films were prepared using hot wire chemical vapor depo...
Microcrystalline silicon carbide (mu c-SiC:H) window layers prepared by Hot-Wire Chemical Vapor Depo...
Crystalline silicon carbide alloys have a very high potential as transparent conductive window layer...
Microcrystalline silicon carbide (mu c-SiC:H) thin films in stoichiometric form were deposited from ...
To optimize the performance of microcrystalline silicon carbide (mu c-SiC:H) window layers in n-i-p ...
Microcrystalline silicon carbide (mu c-SiC) films were prepared using hot wire chemical vapor deposi...
Al-doped p-type microcrystalline silicon carbide (µc-SiC:H) thin films were deposited by hot-wire ch...
Wide gap n-type microcrystalline silicon carbide [μc-SiC:H(n)] is highly suitable as window layer ma...
Highly crystalline microcrystalline silicon carbide (μc-SiC:H) with excellent optoelectronic materia...
We investigated the antireflective (AR) effect of hydrogenated nanocrystalline cubic silicon carbide...
Microcrystalline silicon (muc-Si:H) prepared by hot-wire chemical vapour deposition (HWCVD) at low s...
The effects of multi-layered p-type microcrystalline (μc-) Si:H windows on the performance of substr...
N-type microcrystalline silicon carbide (μc-SiC:H(n)) is a wide bandgap material that is very promis...
The effects of multi-layered p-type microcrystalline (μc-) Si:H windows on the performance of substr...
The effects of multi-layered p-type microcrystalline (μc-) Si:H windows on the performance of substr...