Fully integrated ultra wide band CMOS low noise amplifier
- Grewing, C.
- Friedrich, M.
- Li Puma, G.
- Sandner, C.
- van Waasen, S.
- Wiesbauer, A.
- Winterberg, K.
Publication date
January 2004
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE)Abstract
A single ended low noise amplifier (LNA) in distributed amplifier technique for ultra wide band (UWB) fabricated in a standard 0.13 μm CMOS technology is presented. Measurement results are given for a chip-on-board module to take possible influences of a product assembly into account. The amplifier provides 15 dB gain with a corner frequency up to 5 GHz, a noise figure of 4.5 dB to 5.5 dB at 50 Ω in this frequency range and an input 1 dB-compression point of -5 dBm
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