Monolithic pin-HEMT 1.55 μm Photoreceiver on InP with 27GHz Bandwidth
- Umbach, A.
- van Waasen, Stefan
- Schlaak, W.
- Schramm, Christian
- Seeger, A.
- Wolfram, P.
- Tegude, F.-J.
- Unterbörsch, G.
- Auer, U.
- Bach, H.-G.
- Bertenburg, R. M.
- Breuer, V.
- Ebert, W.
- Janßen, G.
- Mekonnen, G. G.
- Passenberg, W.
Publication date
January 1996
DOI Publisher
Institution of Engineering and Technology (IET) ISSN
0013-5194 Citation count (estimate)
16Abstract
A monolithically integrated photoreceiver is presented. Based on a new integration concept comprising a waveguide integrated photodiode and a travelling wave GaInAs/AlInAs-HEMT amplifier. A record 3 dB bandwidth of 27 GHz is measured and a clearly open eye is obtained for a 20 Gbit/s pseudo-random bit stream. This high speed performance was achieved with photolithographically defined 0.7 μm gate length HEMTs, regrown by MBE on semi-insulating GaInAsP waveguide layer
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