10 Gb/s low-noise transimpedance amplifier for optoelectronic receivers based on InAlAs/InGaAs/InP HEMTs
- Bertenburg, R.M.
- Janssen, G.
- van Waasen, S.
- Auer, U.
- Reuter, R.
- Fritzsche, D.
- Tegude, F.-J.
Publication date
January 1996
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE)Abstract
A transimpedance amplifier based on 0.7 μm InAlAs/InGaAs/InP HEMTs and applicable for bit rates in the range of 2.5-10 Gb/s has been developed and realized. Compact chip layout guarantees extremely flat gain, linear phase and very small group delay time variations, respectively. Measured transimpedance is ZTO=51.6 dBΩ (f3 dB=8.5 GHz) for the 10 Gb/s version. Mean equivalent input noise current density is ina=7.98 pA/√(Hz) over the bandwidth 0⩽f⩽10 GHz. Calculated receiver sensitivity is ηPmin=-24.1 dBm@10 Gb/s and BER=10-
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