Structure of the ESR spectra of thin film silicon after electron bombardment

Astakhov, O.
Carius, R.
Lambertz, A.
Petrusenko, Y.
Borysenko, V.
Barankov, D.
Finger, F.

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Publication date

January 2008

DOI

10.1016/j.jnoncrysol.2007.10.048

Publisher

Elsevier BV

ISSN

0022-3093

Citation count (estimate)

Abstract

Defect creation by MeV electron bombardment of a-Si:H and mu c-Si:H thin films is used to explore hidden features of the electron spin resonance spectra. Different dynamics of creation and annealing for different paramagnetic states is expected and found. In a-Si:H the g-value of the db resonance does not change after irradiation, but a pair of satellites is observed on its wings. In the spectra of mu c-Si:H three additional lines can be extracted after irradiation, overlapping with the central resonance. Careful analysis of the spectra shows also modification of the dangling bond resonance in mu c-Si:H that is compatible with variations of two components of the spectra and supports the model of two dominant defect states in mu c-Si:H. (c) ...