Bipolar resistive switching (BRS) as well as unipolar resistive switching (URS) behaviors in Pt/27 nm thick TiO2/Pt stacks were investigated. Depending on the current compliance during the electroforming process, either BRS or URS was observed. With a lower current compliance (< 0.1 mA) during electroforming, asymmetric current-voltage curves showing BRS were observed in the voltage range -1.6 to +1.1 V, while with a higher current compliance (1-10 mA) URS behavior was observed. Furthermore, the permanent transition from BRS to URS was investigated by applying a voltage with a higher current compliance (similar to 3 mA)
To initiate resistance switching phenomena, it is usually necessary to apply a strong electric field...
Nanocrystalline TiO2 thin films were fabricated on Pt(111)/Ti/SiO2/Si substrates by the thermal oxid...
We suggest a possible mechanism for bipolar switching in a Pt/TiO2/Pt resistive switching cell in te...
In Pt/27 nm thick TiO2/Pt stacks bipolar and unipolar resistive switching (BRS, URS) behavior of wer...
Abnormal bipolar-like resistive changes are reported in TiO(2) thin films sandwiched between Pt top ...
Recently, the resistive switching behavior in TiO$_{2}$ has drawn attention due to its application t...
Reversible and controllable conversion between unipolar and bipolar resistive switching (URS and BRS...
We report on the electroforming in resistively switching nanocrosspoint devices made of a reactively...
Effect of the top electrode (TE) metal on the resistive switching of(TE)/TiO2/Pt structure was inves...
The bipolar resistive switching characteristics in polycrystalline TiO2 thin films after regular for...
Redox-type resistive random access memories based on transition-metal oxides are studied as adjustab...
We find that resistance switching (RS) phenomena change reversibly between bipolar RS (BRS) and unip...
Resistive switching characteristics of Pt/TiO2/W devices are investigated. TiO2 thin films are grown...
The resistive switching behavior of 100nmthick Co-doped TiO2 thin films grown by using a conventiona...
Redox-type resistive random access memories based on transition-metal oxides are studied as adjustab...
To initiate resistance switching phenomena, it is usually necessary to apply a strong electric field...
Nanocrystalline TiO2 thin films were fabricated on Pt(111)/Ti/SiO2/Si substrates by the thermal oxid...
We suggest a possible mechanism for bipolar switching in a Pt/TiO2/Pt resistive switching cell in te...
In Pt/27 nm thick TiO2/Pt stacks bipolar and unipolar resistive switching (BRS, URS) behavior of wer...
Abnormal bipolar-like resistive changes are reported in TiO(2) thin films sandwiched between Pt top ...
Recently, the resistive switching behavior in TiO$_{2}$ has drawn attention due to its application t...
Reversible and controllable conversion between unipolar and bipolar resistive switching (URS and BRS...
We report on the electroforming in resistively switching nanocrosspoint devices made of a reactively...
Effect of the top electrode (TE) metal on the resistive switching of(TE)/TiO2/Pt structure was inves...
The bipolar resistive switching characteristics in polycrystalline TiO2 thin films after regular for...
Redox-type resistive random access memories based on transition-metal oxides are studied as adjustab...
We find that resistance switching (RS) phenomena change reversibly between bipolar RS (BRS) and unip...
Resistive switching characteristics of Pt/TiO2/W devices are investigated. TiO2 thin films are grown...
The resistive switching behavior of 100nmthick Co-doped TiO2 thin films grown by using a conventiona...
Redox-type resistive random access memories based on transition-metal oxides are studied as adjustab...
To initiate resistance switching phenomena, it is usually necessary to apply a strong electric field...
Nanocrystalline TiO2 thin films were fabricated on Pt(111)/Ti/SiO2/Si substrates by the thermal oxid...
We suggest a possible mechanism for bipolar switching in a Pt/TiO2/Pt resistive switching cell in te...