Resistive memory (RRAM) is one of the strong emerging technologies in modern memory field. This type of memories has the potential to be the replacement of several current memory types. As any new technology, RRAM brings new challenges concerning technology and design. This work discusses some aspects concerning the design of active resistive memories and compares three possible memory architectures. (C) 2006 Elsevier GmbH. All rights reserved
RRAM, which has the characteristics of high speed, low power consumption, easy integration, compatib...
Resistive Random-Access Memory (ReRAM) technology has been viewed as one of the most reliable non-vo...
DRAM, the type of memory cell widely used for high density high speed system memory, faces uncertain...
The resistive random access memory (RRAM) device has been widely studied due to its excellent memory...
With the rapid development of memory, it has entered all aspects of people's life. Based on the deve...
International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), Hsinchu, TAIWAN, APR...
Abstract In this work, we provide a comprehensive discussion on the various models proposed for the ...
The modern-day computing technologies are continuously undergoing a rapid changing landscape; thus, ...
Memory has always been a building block element for information technology. Emerging technologies su...
International audienceStatic Random-Access Memories (SRAMs) have flourished in the memory market rel...
Oxide-based resistive random access memory(RRAM) has been widely studied as the promising candidate ...
The efforts in this doctoral thesis have been focused on the characterization and modeling of memri...
© 2017 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for a...
Resistive RAM (RRAM) technology gathered a significant interest in the last decade for system-on-chi...
Resistive random access memory (RRAM or ReRAM) is a non-volatile memory (NVM) technology that consum...
RRAM, which has the characteristics of high speed, low power consumption, easy integration, compatib...
Resistive Random-Access Memory (ReRAM) technology has been viewed as one of the most reliable non-vo...
DRAM, the type of memory cell widely used for high density high speed system memory, faces uncertain...
The resistive random access memory (RRAM) device has been widely studied due to its excellent memory...
With the rapid development of memory, it has entered all aspects of people's life. Based on the deve...
International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), Hsinchu, TAIWAN, APR...
Abstract In this work, we provide a comprehensive discussion on the various models proposed for the ...
The modern-day computing technologies are continuously undergoing a rapid changing landscape; thus, ...
Memory has always been a building block element for information technology. Emerging technologies su...
International audienceStatic Random-Access Memories (SRAMs) have flourished in the memory market rel...
Oxide-based resistive random access memory(RRAM) has been widely studied as the promising candidate ...
The efforts in this doctoral thesis have been focused on the characterization and modeling of memri...
© 2017 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for a...
Resistive RAM (RRAM) technology gathered a significant interest in the last decade for system-on-chi...
Resistive random access memory (RRAM or ReRAM) is a non-volatile memory (NVM) technology that consum...
RRAM, which has the characteristics of high speed, low power consumption, easy integration, compatib...
Resistive Random-Access Memory (ReRAM) technology has been viewed as one of the most reliable non-vo...
DRAM, the type of memory cell widely used for high density high speed system memory, faces uncertain...