Low temperature measurements of Schottky-barrier SOI-MOSFETs with dopant segregation
- Zhang, M.
- Knoch, J.
- Zhao, Q. T.
- Fox, A.
- Lenk, S.
- Mantl, S.
Publication date
January 2005
DOI Publisher
Institution of Engineering and Technology (IET) ISSN
0013-5194 Citation count (estimate)
14Abstract
Temperature dependent experimental results of Schottky-barrier MOSFETs with dopant segregation using fully nickel silicided source and drain contacts are presented. The dependence of the extracted effective Schottky-barrier height (SBH) on the gate voltage clearly shows that use of dopant segregation lowers the effective SBH for electron injection significantly from 0.64 eV down to similar to 0.1 eV
Add to ORKG