Electron and hole transport in microcrystalline silicon solar cells studied by time-of-flight photocurrent spectroscopy

A photocurrent time-of-flight study of carrier transport in microcrystalline silicon pin diodes prepared over a range of crystallinities is presented. Electron and hole drift mobilities at a crystalline volume fraction > 0.35 are typically 3.8 and 1.3 cm(2)/(V s) respectively at 300 K and a thickness to electric field ratio of 1.8 X 10(-7) cm(2)/V. A factor of five enhancement in hole mobility over amorphous silicon persists at a crystalline volume fraction as low as 0.1. Current decays are dispersive and mobilities are thermally activated, although detailed field-dependence is still under investigation. Evidence for a sharp fall in the density of states at 0.13 eV above the valence band edge is presented. Similarities in behaviour with certain amorphous and polymorphous silicon samples are identified. (c) 2006 Elsevier B.V. All rights reserved