Numerical analysis of the spin-dependent dark current in microcrystalline silicon solar cells

We present a detailed analysis of the voltage dependence of dangling bond recombination in microcrystalline silicon p-i-n diodes observed in the forward dark current at room temperature by electrically detected magnetic resonance (EDMR). The EDMR response is numerically simulated with physically reasonable parameters that are well suited to fully describe the electronic behavior of the diodes. A sign reversal as observed for amorphous silicon diodes is predicted at high voltages. The basic mechanism causing the sign reversal is shown to be due to space charge. The high sensitivity of the EDMR response to various material parameters is demonstrated. (C) 2004 American Institute of Physics