We observed significant influence of the top-electrode material on the thickness and temperature dependences of the dielectric response of single-crystalline Ba0.7Sr0.3TiO3 thin-film capacitors. For SrRuO3/Ba0.7Sr0.3TiO3/SrRuO3 samples, the position of dielectric maximum shifts to lower temperatures with decreasing film thickness, whereas the samples with Pt top electrodes exhibit an opposite trend. Moreover, the apparent "interfacial" capacitance, extracted from the film-thickness dependence of dielectric response, is very different for these two types of samples and strongly depends on temperature. Experimental results are analyzed theoretically in light of the depolarizing-field and strain effects on the transition temperature and permit...
The temperature dependence of the dielectric permittivity ε of an 800 nm thick SrTi O3 layer in epit...
The thickness dependence of the tunability of Ba0.7Sr0.3TiO3 thin films is investigated. The capacit...
Three-layer epitaxial heterostructures, in which a 1000-nm-thick intermediate layer of Ba<inf>0.05</...
We studied theoretically the influence of the progressive strain relaxation and the depolarizing-fie...
Some variations in the dielectric parameters in thin films to those in bulk ceramics have been obser...
Single-crystalline all-perovskite SrRuO3/Ba0.7Sr0.3TiO3/SrRuO3 thin-film capacitors epitaxially grow...
The ever increasing memory densities of the so called Dynamic Random Access Memory (DRAM) lead to a ...
The ever increasing memory densities of the so called Dynamic Random Access Memory (DRAM) lead to a ...
Measurements on 'free-standing' single-crystal barium titanate capacitors with thickness down to 75 ...
The collapse in dielectric constant at small thickness commonly observed in ferroelectric thin films...
IUMRS-ICEM 2002, Xi an, 10-14 June 2002Apart from conventional parallel plate capacitors, the coplan...
Apart from conventional parallel plate capacitors, the coplanar capacitor is another useful structur...
Due to the dependence on both bulk and interface properties neither the effective dielectric constan...
Thin-film capacitors, with barium strontium titanate (BST) dielectric layers between 7.5 and 950 nm ...
Three-layer epitaxial heterostructures, in which a 1000-nm-thick intermediate layer of Ba0.05Sr0.95T...
The temperature dependence of the dielectric permittivity ε of an 800 nm thick SrTi O3 layer in epit...
The thickness dependence of the tunability of Ba0.7Sr0.3TiO3 thin films is investigated. The capacit...
Three-layer epitaxial heterostructures, in which a 1000-nm-thick intermediate layer of Ba<inf>0.05</...
We studied theoretically the influence of the progressive strain relaxation and the depolarizing-fie...
Some variations in the dielectric parameters in thin films to those in bulk ceramics have been obser...
Single-crystalline all-perovskite SrRuO3/Ba0.7Sr0.3TiO3/SrRuO3 thin-film capacitors epitaxially grow...
The ever increasing memory densities of the so called Dynamic Random Access Memory (DRAM) lead to a ...
The ever increasing memory densities of the so called Dynamic Random Access Memory (DRAM) lead to a ...
Measurements on 'free-standing' single-crystal barium titanate capacitors with thickness down to 75 ...
The collapse in dielectric constant at small thickness commonly observed in ferroelectric thin films...
IUMRS-ICEM 2002, Xi an, 10-14 June 2002Apart from conventional parallel plate capacitors, the coplan...
Apart from conventional parallel plate capacitors, the coplanar capacitor is another useful structur...
Due to the dependence on both bulk and interface properties neither the effective dielectric constan...
Thin-film capacitors, with barium strontium titanate (BST) dielectric layers between 7.5 and 950 nm ...
Three-layer epitaxial heterostructures, in which a 1000-nm-thick intermediate layer of Ba0.05Sr0.95T...
The temperature dependence of the dielectric permittivity ε of an 800 nm thick SrTi O3 layer in epit...
The thickness dependence of the tunability of Ba0.7Sr0.3TiO3 thin films is investigated. The capacit...
Three-layer epitaxial heterostructures, in which a 1000-nm-thick intermediate layer of Ba<inf>0.05</...