For mixed-phase films prepared by plasma enhanced chemical vapour deposition the density of crystallites in an amorphous matrix was measured as a function of the hydrogen-dilution of the source gas. General features of the observed growth mode can be described in terms of a genuine surface model incorporating autocatalytic crystallization. We investigated the chemical transport of silicon-related species in a hydrogen plasma and found it to be of major importance under the present conditions. The results cast some doubts on previous concepts relating to the existence of a growth zone and of amorphous incubation layers as observed by in-situ ellipsometry
The role of plasma–surface interactions during microcrystalline silicon thin film growth has been st...
We report on further insights in the microcrystalline silicon (µc-Si:H) deposition using expanding t...
Nucleation and growth of hydrogenated microcrystalline silicon films are investigated by scanning pr...
The formation of crystalline nuclei and the growth of microcrystalline material in hydrogenatedsilic...
International audienceWe have exposed a freshly deposited boron-doped hydrogenated amorphous silicon...
Low-temperature fine-crystalline silicon films grown by plasma-enhanced chemical vapour deposition (...
The growth mechanisms of microcrystalline silicon thin films at low temperatures (100-250°C) by plas...
Hydrogen diffusion is monitored during plasma conditions corresponding to the growth of polymorphou...
The underlying physical and chemical mechanisms and role of the plasma species in the synthesis of h...
The plasma chemistry of an expanding thermal plasma in argon/hydrogen mixtures in interaction with s...
Microcrystalline silicon films grown in an expanding thermal plasma, i.e. in the absence of ion bomb...
Microcrystalline silicon films grown in an expanding thermal plasma, i.e. in the absence of ion bomb...
The transition from amorphous to fine-crystalline silicon films deposited by plasma-enhanced chemica...
The role of plasma–surface interactions during microcrystalline silicon thin film growth has been st...
We report on further insights in the microcrystalline silicon (µc-Si:H) deposition using expanding t...
Nucleation and growth of hydrogenated microcrystalline silicon films are investigated by scanning pr...
The formation of crystalline nuclei and the growth of microcrystalline material in hydrogenatedsilic...
International audienceWe have exposed a freshly deposited boron-doped hydrogenated amorphous silicon...
Low-temperature fine-crystalline silicon films grown by plasma-enhanced chemical vapour deposition (...
The growth mechanisms of microcrystalline silicon thin films at low temperatures (100-250°C) by plas...
Hydrogen diffusion is monitored during plasma conditions corresponding to the growth of polymorphou...
The underlying physical and chemical mechanisms and role of the plasma species in the synthesis of h...
The plasma chemistry of an expanding thermal plasma in argon/hydrogen mixtures in interaction with s...
Microcrystalline silicon films grown in an expanding thermal plasma, i.e. in the absence of ion bomb...
Microcrystalline silicon films grown in an expanding thermal plasma, i.e. in the absence of ion bomb...
The transition from amorphous to fine-crystalline silicon films deposited by plasma-enhanced chemica...
The role of plasma–surface interactions during microcrystalline silicon thin film growth has been st...
We report on further insights in the microcrystalline silicon (µc-Si:H) deposition using expanding t...
Nucleation and growth of hydrogenated microcrystalline silicon films are investigated by scanning pr...