A system of interdigital gates is used to create a periodic potential profile in a multilayer heterostructure. The electrostatic problem for the spatial distribution of the potential is solved and experimentally examined by measurements of current-voltage characteristics of resonant-tunnelling diodes embedded in the depletion region of the Schottky contact. It is shown that the position of the resonant peak voltage is sensitive to the spatial potential distribution and that with appropriate parameters of the heterostructure the sensitivity of the gates can be considerably enhanced. (C) 2001 American Institute of Physics
In this study we examine the effect of superlattice (SL) structures as electron injectors to asymmet...
We report on the observation of photoluminescence from the second and third electronic subbands in u...
A theoretical study of multi-quantum-well semiconductor heterostructures under applied electric fiel...
Hydrostatic pressure measurements are used to investigate the formation mechanism of electric field ...
Hydrostatic pressure measurements are used to investigate the formation mechanism of electric field ...
A theoretical study of resonant tunneling in multilayered heterostructures is presented based on an ...
A theoretical resonant-tunnelling approach is used in a detailed study of the electronic and transmi...
The electron movement in thin semiconductor layer adjoining interface semiconductor-insulator in met...
We have studied the vertical transport and formation mechanisms of electric field domains in doped w...
We have studied the effects of magnetic field on the fluctuations of the electron density of states ...
A description is given of resonant tunnelling processes in double-barrier semiconductor heterostruct...
Semiconductor superlattices are artificial crystals with a periodicity much larger than lattice cons...
Semiconductor superlattices are artificial crystals with a periodicity much larger than lattice cons...
Vita.In this thesis, the electron transport mechanisms and the current-voltage characteristics in on...
This paper reviews some of the recent advances in resonant tunneling in GaAlAs-GaAs-GaAlAs heterostr...
In this study we examine the effect of superlattice (SL) structures as electron injectors to asymmet...
We report on the observation of photoluminescence from the second and third electronic subbands in u...
A theoretical study of multi-quantum-well semiconductor heterostructures under applied electric fiel...
Hydrostatic pressure measurements are used to investigate the formation mechanism of electric field ...
Hydrostatic pressure measurements are used to investigate the formation mechanism of electric field ...
A theoretical study of resonant tunneling in multilayered heterostructures is presented based on an ...
A theoretical resonant-tunnelling approach is used in a detailed study of the electronic and transmi...
The electron movement in thin semiconductor layer adjoining interface semiconductor-insulator in met...
We have studied the vertical transport and formation mechanisms of electric field domains in doped w...
We have studied the effects of magnetic field on the fluctuations of the electron density of states ...
A description is given of resonant tunnelling processes in double-barrier semiconductor heterostruct...
Semiconductor superlattices are artificial crystals with a periodicity much larger than lattice cons...
Semiconductor superlattices are artificial crystals with a periodicity much larger than lattice cons...
Vita.In this thesis, the electron transport mechanisms and the current-voltage characteristics in on...
This paper reviews some of the recent advances in resonant tunneling in GaAlAs-GaAs-GaAlAs heterostr...
In this study we examine the effect of superlattice (SL) structures as electron injectors to asymmet...
We report on the observation of photoluminescence from the second and third electronic subbands in u...
A theoretical study of multi-quantum-well semiconductor heterostructures under applied electric fiel...