Coplanar conductance fluctuations or excess noise of undoped hydrogenated microcrystalline silicon (muc-Si: H) thin films grown by VHF-PECVD from silane-hydrogen mixtures with silane concentrations from 2% to 6% have been studied between room temperature and 470 K. We report that undoped muc-Si: H thin films show similar noise-power spectra to those of undoped a-Si : H films in a coplanar sample geometry. At lower temperatures, the noise with the slope alpha = 0.60 +/- 0.07 and at higher temperatures, the noise with the slope alpha close to unity dominate the spectrum. The noise magnitude decreases with decreasing silane concentration and becomes strongly temperature dependent with increased crystallinity. (C) 2003 Kluwer Academic Publisher...
We measured the spectrum of conductance fluctuations in n-type, p-type, and undoped hydrogenated amo...
ABSTRACT: Low Energy Plasma-Enhanced Chemical Vapor Deposition (LEPECVD) is one of the new technique...
Polycrystalline layers of Si0.7Ge0.3 were deposited using low pressure chemical vapor deposition to ...
Coplanar conductance fluctuations or excess noise of undoped hydrogenated microcrystal-line silicon ...
Coplanar conductance fluctuations or excess noise of undoped hydrogenated microcrystalline silicon (...
Coplanar conductance fluctuations in a range of device quality undoped hydrogenated amorphous silico...
We report coplanar conductance fluctuations of device quality, undoped hydrogenated amorphous silico...
Conductance fluctuations in four samples of undoped intrinsic hydrogenated amorphous silicon (a-Si:H...
We present measurements of conductance noise in undoped a-Si:H and a-SiGe: H thin films in both a tr...
Recently, there has been much uncertainty and controversy concerning various aspects of the behavio...
Steady-state photocarrier grating (SSPG) and steady-state photoconductivity, sigma(ph), experiments ...
Abstract In this article, we report that the origins of 1/f noise in pm-Si:H film resistors are inho...
We present the study of low-frequency noise, or 1/f noise, in degenerately doped Si:P and Ge:P δ...
Electrical noise measurements are reported on two devices of the disordered semiconductor hydrogenat...
We present the study of low-frequency noise, or 1/f noise, in degenerately doped Si: P and Ge: P del...
We measured the spectrum of conductance fluctuations in n-type, p-type, and undoped hydrogenated amo...
ABSTRACT: Low Energy Plasma-Enhanced Chemical Vapor Deposition (LEPECVD) is one of the new technique...
Polycrystalline layers of Si0.7Ge0.3 were deposited using low pressure chemical vapor deposition to ...
Coplanar conductance fluctuations or excess noise of undoped hydrogenated microcrystal-line silicon ...
Coplanar conductance fluctuations or excess noise of undoped hydrogenated microcrystalline silicon (...
Coplanar conductance fluctuations in a range of device quality undoped hydrogenated amorphous silico...
We report coplanar conductance fluctuations of device quality, undoped hydrogenated amorphous silico...
Conductance fluctuations in four samples of undoped intrinsic hydrogenated amorphous silicon (a-Si:H...
We present measurements of conductance noise in undoped a-Si:H and a-SiGe: H thin films in both a tr...
Recently, there has been much uncertainty and controversy concerning various aspects of the behavio...
Steady-state photocarrier grating (SSPG) and steady-state photoconductivity, sigma(ph), experiments ...
Abstract In this article, we report that the origins of 1/f noise in pm-Si:H film resistors are inho...
We present the study of low-frequency noise, or 1/f noise, in degenerately doped Si:P and Ge:P δ...
Electrical noise measurements are reported on two devices of the disordered semiconductor hydrogenat...
We present the study of low-frequency noise, or 1/f noise, in degenerately doped Si: P and Ge: P del...
We measured the spectrum of conductance fluctuations in n-type, p-type, and undoped hydrogenated amo...
ABSTRACT: Low Energy Plasma-Enhanced Chemical Vapor Deposition (LEPECVD) is one of the new technique...
Polycrystalline layers of Si0.7Ge0.3 were deposited using low pressure chemical vapor deposition to ...