In this article, the domain wall densities calculated from simulated domain configurations are used to estimate the domain wall contributions to the dielectric permittivity of a ferroelectric material. The configurations were calculated using a Monte-Carlo model proposed by B. G. Potter et al. [J. Appl. Phys. 87, 4415 (2000)]. The temperature and frequency dependence of the contributions are analyzed and compared to experimental results obtained on PbZrxTi1-xO3 thin films. (C) 2003 American Institute of Physics
Temperature dependent dielectric response has been measured in Pb(Zr1-xTix)O-3 ceramics. Samples of ...
In ferroelectrics, the effect of domain wall motion on properties has been widely studied, but non-m...
It is known that the permittivity of ferroelectric polydomain films and single crystals in weak elec...
Abstract — In this study, the real and imaginary parts of the complex permittivity of PZT ferroelect...
International audienceIn this study, the real and imaginary parts of the complex permittivity of lea...
We report on the contribution of 90° ferroelastic domain walls in strain-engineered PbZr(0.2)Ti(0.8)...
International audienceIn antiferroelectric PbZrO 3 thin films, a weak residual ferroelectric phase i...
The real and imaginary parts of dielectric permittivities of a ferroelectric relaxor are studied by ...
A domain model consistent with the measured capacitance-voltage ( CV) characteristic of PZT (Pb( Zr,...
The domain configuration and ferroelectric property of mode relaxor ferroelectrics (RFEs) are invest...
The contribution of domain walls to the dielectric permittivity of ferroelectrics is customarily exp...
This work presents a study of the domain wall dynamics in Pb(Zr1−xTix)O3 (PZT)-based piezoceramics b...
The real and imaginary parts of dielectric permittivities of a ferroelectric relaxer are studied by ...
The dielectric and ferroelectric behaviors of relaxor ferroelectrics over the ferroelectric transiti...
Capacitor ferroelectric structures are the basis of many modern microelectronic devices, including n...
Temperature dependent dielectric response has been measured in Pb(Zr1-xTix)O-3 ceramics. Samples of ...
In ferroelectrics, the effect of domain wall motion on properties has been widely studied, but non-m...
It is known that the permittivity of ferroelectric polydomain films and single crystals in weak elec...
Abstract — In this study, the real and imaginary parts of the complex permittivity of PZT ferroelect...
International audienceIn this study, the real and imaginary parts of the complex permittivity of lea...
We report on the contribution of 90° ferroelastic domain walls in strain-engineered PbZr(0.2)Ti(0.8)...
International audienceIn antiferroelectric PbZrO 3 thin films, a weak residual ferroelectric phase i...
The real and imaginary parts of dielectric permittivities of a ferroelectric relaxor are studied by ...
A domain model consistent with the measured capacitance-voltage ( CV) characteristic of PZT (Pb( Zr,...
The domain configuration and ferroelectric property of mode relaxor ferroelectrics (RFEs) are invest...
The contribution of domain walls to the dielectric permittivity of ferroelectrics is customarily exp...
This work presents a study of the domain wall dynamics in Pb(Zr1−xTix)O3 (PZT)-based piezoceramics b...
The real and imaginary parts of dielectric permittivities of a ferroelectric relaxer are studied by ...
The dielectric and ferroelectric behaviors of relaxor ferroelectrics over the ferroelectric transiti...
Capacitor ferroelectric structures are the basis of many modern microelectronic devices, including n...
Temperature dependent dielectric response has been measured in Pb(Zr1-xTix)O-3 ceramics. Samples of ...
In ferroelectrics, the effect of domain wall motion on properties has been widely studied, but non-m...
It is known that the permittivity of ferroelectric polydomain films and single crystals in weak elec...