Modified charge fluctuation noise model for electrolyte-insulator-semiconductor devices

A modified charge fluctuation low-frequency noise model for an electrolyte-insulator-semiconductor (EIS) structure is developed. Physical processes in the semiconductor, insulator and electrolyte medium responsible for low-frequency charge fluctuation are discussed based on an electrical equivalent scheme for the EIS structure. Noise spectral density dependence on charge concentration fluctuation related to processes on the electrolyte-insulator, insulator-semiconductor interfaces and bulk semiconductor are analyzed