Strain-Induce Shift of the Crystal-Field Splitting of SrTiO(3) Embedded in Scandate Multilayers

Strained SrTiO₃ layers have become of interest, since the paraelectric-to-ferroelectric transition temperature can be increased to room temperature. A linear relationship between strain and energy splitting of the fundamental transitions in the fine structure of Ti L(₂,₃) and O K edges is observed, that can be exploited to measure strain from electronic transitions, complementary to measuring local strain directly via high-resolution transmission electron microscopy (HRTEM) images. In particular, for both methods, the geometrical phase analysis performed on high-resolution images and the measurement of the energy splitting by energy loss spectroscopy, tensile strain of SrTiO₃ layers was measured when grown on DyScO₃ and GdScO₃ substrates. The effect of strain on the electron loss near edge structure (ELNES) of the Ti L(₂,₃) edge in comparison to unstrained samples is analyzed. Ab initio calculations of the Ti L(₂,₃) and O K edge show a linear variation of the crystal field splitting with strain. Calculated and experimental values of the crystal field splitting show a very good agreement